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首页> 外文会议>Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A. >Particle Production in High Density Silane Plasma
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Particle Production in High Density Silane Plasma

机译：高密度硅烷等离子体中的颗粒产生

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摘要

To understand the mechanisms of nanoparticle formation and its potential applications, we have investigated silicon particles formed in various gasses in an inductive coupled plasma (ICP) system and have measured their structural properties by electron microscopy. Particle generation in pure SiH_4 and SiH_4/H_2 are reported. ICP silane plasmas are shown to be an interesting and versatile source of nanoparticles. Three regimes are mapped out: a regime of no observable particle growth at the lowest pressures, a regime of polydisperse and agglomerated particles at the highest pressures, and a regime yielding highly monodisperse particles at intermediate pressures. Conditions that generate these nonagglomerated, extremely monodisperse silicon particles are emphasized. For H_2 dilutions less than 92%, the growth rate is almost independent of H_2 partial pressure. Particle growth decreases steadily when the H_2 dilution is increased further. TEM images, however, indicate that the addition of hydrogen decreases the particle density. At higher dilution ratios, polycrystalline particles are obtained. Under all other conditions the particles are amorphous. Reasons for this behavior are explored.
机译：为了了解纳米粒子形成的机理及其潜在应用，我们研究了在电感耦合等离子体（ICP）系统中各种气体中形成的硅粒子，并通过电子显微镜测量了其结构特性。据报道在纯SiH_4和SiH_4 / H_2中产生了颗粒。 ICP硅烷等离子体被证明是一种有趣且用途广泛的纳米粒子来源。绘制了三种状态：在最低压力下没有可观察到的颗粒生长的状态；在最高压力下没有多分散和团聚的颗粒的状态；在中等压力下产生高度单分散的颗粒的状态。强调产生这些非团聚的，极单分散的硅颗粒的条件。对于小于92％的H_2稀释液，生长速率几乎与H_2分压无关。当H_2稀释度进一步增加时，颗粒的增长稳定地减少。然而，TEM图像表明，氢的添加降低了颗粒密度。在较高的稀释比下，获得多晶颗粒。在所有其他条件下，颗粒均为无定形。探索这种行为的原因。

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