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首页> 外文会议>Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A. >Investigation on Process Dependence of Self-Assembled Metal Nanocrystals
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Investigation on Process Dependence of Self-Assembled Metal Nanocrystals

机译：自组装金属纳米晶体的工艺依赖性研究

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摘要

We report the systematic characterization of metal nanocrystal formation on ultra-thin tunnel gate oxide (2～3nm) for memory applications. To get a high density and small average size of nanocrystals, the process parameters including annealing temperature, initial film thickness, and substrate doping are investigated for Au, Ag, and Pt nanocrystal formation with Si nanocrystal structure as control samples. The observation of nanocrystal formation by scanning electron microscope (SEM) shows that annealing below melting temperature of deposited film contributes to the reshaping of nanocrystals, while the initial film thickness to actual nanocrystal growth. In addition, the Schottky charge effect from substrate doping is not negligible if the tunnel oxide is thin. Controlling the process parameters, Au, Ag, and Pt nanocrystals of 4.0x10~(11)cm~(-2) 2.8x10~(11)cm~(-2), and 2.4x10~(11)cm~(-2) can be formed with mean size of 6.2nm, 6.6nm, and 8.0nm, respectively. The observation of nanocrystals by scanning transmission electron microscope (STEM) shows that nanocrystals are spherical and crystalline. Metal contamination to the Si/SiO_2 interface is also closely monitored with many process recipes of metal nanocrystal formation on 2～3nm oxide showing alomically clean interface. Electrical evaluation of nanocrystal formation is carried out by C-V measurements of metal-oxide-semiconductor (MOS) capacitors with embedded metal nanocrystals.
机译：我们报道了用于存储器应用的超薄隧道栅氧化物（2〜3nm）上金属纳米晶体形成的系统表征。为了获得高密度且平均尺寸较小的纳米晶，研究了退火温度，初始膜厚和衬底掺杂等工艺参数，以Si纳米晶结构作为对照样品，形成了Au，Ag和Pt纳米晶。通过扫描电子显微镜（SEM）观察到的纳米晶体形成表明，低于沉积膜的熔化温度的退火有助于纳米晶体的重塑，而初始膜厚度对实际纳米晶体的生长却有帮助。另外，如果隧道氧化物薄，则来自衬底掺杂的肖特基电荷效应不可忽略。控制4.0x10〜（11）cm〜（-2）2.8x10〜（11）cm〜（-2）和2.4x10〜（11）cm〜（-2）的工艺参数Au，Ag和Pt纳米晶体可以形成平均尺寸分​​别为6.2nm，6.6nm和8.0nm的）。通过扫描透射电子显微镜（STEM）对纳米晶体的观察表明，纳米晶体为球形和晶体。 Si / SiO_2界面上的金属污染也可以通过许多在2〜3nm氧化物上形成纳米清洁界面的金属纳米晶体形成工艺来密切监测。纳米晶体形成的电学评估是通过对具有嵌入式金属纳米晶体的金属氧化物半导体（MOS）电容器进行C-V测量来进行的。

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