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首页> 外文会议>Symposium on Quasicrystals held November 30-December 2,1998,Boston,Massachusetts,U.S.A. >Modulated photocurrent measurements on icosahedral quasicrystals of Al-Pd-Re system
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Modulated photocurrent measurements on icosahedral quasicrystals of Al-Pd-Re system

机译：Al-Pd-Re系统的二十面体准晶体的调制光电流测量

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摘要

Modulated photocurrent method originally developed for analyzing the electronic states of semiconductor has been applied to an Al-Pd-Re quasicrystal having high electrical resistiviyt.the measured DC component of hte photocurrent has indicated that the mobility of the photocarrier is approximately the same as that of the dark carrier at the Fermi level.the data of the amplitude and phase shift of the AC component can be explained well by a simple model in which only the two processes,carrier generation and recombination,are involved.The recombination time obtained by fitting is by about six orders larger than those reported for semiconductors.the long recombination time as well as the energy independent mobility of carriers are discussed in view of a spiky strucutre in electron density of states expected for the quasicrystals.
机译：最初开发的用于分析半导体电子状态的调制光电流方法已应用于具有高电阻率的Al-Pd-Re准晶体。测得的光电流直流分量表明，光载流子的迁移率与光载流子的迁移率大致相同。费米能级的暗载波。交流分量的幅值和相移数据可以通过一个简单的模型很好地解释，该模型仅涉及载波生成和重组这两个过程。通过拟合获得的重组时间为大约比半导体报道的数量大六个数量级。考虑到准晶态的电子密度的尖峰结构，讨论了长的重组时间以及载流子的能量独立迁移率。

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