首页> 外文会议>Symposium on Quasicrystals held November 30-December 2,1998,Boston,Massachusetts,U.S.A. >Porous structure and high electrical resistivity of AlPdRe icosahedral phase
【24h】

Porous structure and high electrical resistivity of AlPdRe icosahedral phase

机译:AlPdRe二十面体相的多孔结构和高电阻率

获取原文
获取原文并翻译 | 示例

摘要

Mechanism of the strucutre formaiton of hte I-phases,which is requried for complete understanding of the origin of their high electrical resistivikty and preparation fo the high quality samples,is proposed.During annealing within 30 minutes,atomic diffusion of Al and Pd atoms from Al_3Pd phase to Al_0.7Re_0.3 phase occurs and orosity is formed in the Al_3Pd phase.It is supposed that the porosity formaiton results from Kirkendal effect.
机译:为了全面了解其高电阻率的起源和制备高质量的样品,提出了I相的结构化解的机理。提出在30分钟内退火期间,Al和Pd原子的原子扩散发生Al_3Pd相至Al_0.7Re_0.3相并在Al_3Pd相中形成疏松,推测孔隙度是由柯肯达尔效应引起的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号