首页> 外文会议>Symposium on Science and Technology of Magnetic Oxides December 1-4, 1997, Boston, Massachusetts, U.S.A. >Observation of large low field magnetoresistance in ramp-edge tunneling unctions based on doped manganite ferromagnetic electrodes and A SrTiO_3 insulator
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Observation of large low field magnetoresistance in ramp-edge tunneling unctions based on doped manganite ferromagnetic electrodes and A SrTiO_3 insulator

机译:掺杂锰铁磁电极和SrTiO_3绝缘子的斜缘隧道连接处低场大磁阻的观测

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摘要

We report the fabication of ferromagnet-insulator-ferromagnet junction devices using a ramp-geometry based on (La_(0.7)Sr_(0.3)MnO_3 ferromagnetic electrodes and a SrTiO_3 insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices wer patterned using photithography and ion milling. As expected from the spin-dependent tunneling, the unction mangetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30
机译:我们报告了基于(La_(0.7)Sr_(0.3)MnO_3铁磁电极和SrTiO_3绝缘体的斜面几何构型的铁磁体-绝缘体-铁磁体结器件的缺陷。使用脉冲激光沉积技术沉积多层薄膜如通过自旋隧道技术所预期的那样,功能磁阻取决于电极中磁化强度的相对方向,最大结磁阻(JMR)为30

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