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首页> 外文会议>Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California >A MODEL FOR BORON T.E.D. IN SILICON : FULL COUPLINGS OF DOPANT WITH FREE AND CLUSTERED INTERSTITIALS
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A MODEL FOR BORON T.E.D. IN SILICON : FULL COUPLINGS OF DOPANT WITH FREE AND CLUSTERED INTERSTITIALS

机译：BORON T.E.D.的模型硅中：掺杂剂与自由簇状填隙物的全偶联

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摘要

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the dopant and the free point defects, taking into account their various charge states. In addition to, and fully coupled with the dopant diffusion we model the growth and dissolution of the interstitials and boron interstitials clusters associated with the anneal of the self-interstitial supersaturation created by the implantation step. It is thus possible to simulate a rather large set of experimental conditions, from conventional predeposition steps, to RTA after low energy implantation.
机译：在这一贡献中，我们提出了硼在硅中瞬态增强扩散的模型。该模型基于通常的对扩散机制，其中考虑了掺杂剂和自由点缺陷之间的非平衡反应，并考虑了它们的各种电荷状态。除掺杂剂扩散之外，还与掺杂剂扩散完全耦合，我们对与由注入步骤产生的自填隙过饱和的退火相关的填隙和硼填隙簇的生长和溶解进行建模。因此，有可能模拟从传统的预沉积步骤到低能量注入后的RTA的大量实验条件。

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