Characterization and monitoring of silicon-on-insulator fabrication processes by high-resolution x-ray diffraction

机译：高分辨率x射线衍射表征和监测绝缘体上硅制造工艺

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High-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI) processing steps. The use of HRXRD is attractive since it is non-destructive and can be applied directly to product wafers. We show the usefulness of this technique for the characterization of amorphizing implants for shallow junctions, solid phase re-crystallization of implanted junctions, cobalt-silicide formation, and oxidation; all are critical processes for CMOS fabrication on SOI.

机译：高分辨率X射线衍射（HRXRD）用于监视绝缘体上硅（SOI）处理步骤。 HRXRD的使用具有吸引力，因为它是非破坏性的，可以直接应用于产品晶圆。我们证明了该技术对于表征非晶结浅结的注入，注入结的固相重结晶，硅化钴的形成和氧化的有用性。所有这些都是在SOI上进行CMOS制造的关键工艺。

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《Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California》|2002年|p.89-94|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
G. M. Cohen; P.M. Mooney; H. Park; C. Cabral; E.C. Jones;
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IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Characterization and monitoring of silicon-on-insulator fabrication processes by high-resolution x-ray diffraction

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