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首页> 外文会议>Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California >Annealing behavior of locally confined dislocation loops under inert and oxidizing ambient
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Annealing behavior of locally confined dislocation loops under inert and oxidizing ambient

机译：在惰性和氧化环境下局部约束位错环的退火行为

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摘要

In this work, we report data for the growth kinetics of locally confined dislocation loops organized within lines of controlled dimension and periodicity. The dislocation loop lines were formed in the crystalline substrate after local Si implantation and annealing in predefined areas. The distance between the lines ranges between 0.2 μm to 5 μm. It is shown that the kinetics of the DLs depends on the distance between them. When the distance is less than 1 μm, the DLs behave in a similar fashion like those grown in a continuous layer, under inert and oxidizing conditions. However, when the distance between the lines is increased (eg. 5 μm), the behavior of the loops is changed. Fast dissolution of the dislocations loops is observed during annealing in inert ambient, due to enhanced interstitial losses, while under oxidizing conditions the loops grow faster.
机译：在这项工作中，我们报告了在受控制的尺寸和周期性范围内组织的局部受限位错环的生长动力学数据。在预定的区域中进行局部硅注入和退火之后，在晶体衬底中形成位错环线。线之间的距离在0.2μm至5μm之间。结果表明，DL的动力学取决于它们之间的距离。当距离小于1μm时，DL在惰性和氧化条件下的行为类似于在连续层中生长的DL。然而，当线之间的距离增加（例如5μm）时，环路的行为改变。由于增加的间隙损失，在惰性环境中退火期间，观察到位错环快速溶解，而在氧化条件下，环生长更快。

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