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首页> 外文会议>Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California >Laser Thermal Processing of Alternate Dopants in Silicon
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Laser Thermal Processing of Alternate Dopants in Silicon

机译：硅中替代掺杂剂的激光热处理

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摘要

Traditionally, the choice of dopant has been limited to those species with the highest solid-solubility, however, Laser Thermal Processing (LTP) is not fundamentally limited by solid-solubility. Therefore, it is of interest to evaluate alternate dopants that have previously been excluded due to low solid-solubility. To this end, alternate dopants of ~(14)N, ~(121)Sb (n-type), ~(27)Al, ~(70)Ga, and ~(115)In (p-type) are compared to conventional dopants of As and B respectively, after LTP and post-LTP thermal processing. Dopants were implanted into <100> silicon wafers of opposite background doping type that had previously been amorphized to a depth of approximately 300 angstroms by a 15 keV ~(28)Si~+ implant of 1x10~(15)/cm~2 dose. An implant energy of 5 keV was sufficiently low to confine the implanted ions to the amorphous layer, with the exception of B, which required an energy of 2 keV. All species were implanted at doses of 1x10~(14), 5x10~(14) and 1.5x10~(15)/cm~2. Samples were LTP utilizing a 308 nm, 18 ns laser pulse with a fluence of 0.680 J/cm~2. Post-LTP thermal processing of the samples consisted of a 900℃rapid thermal anneal (RTA) in a nitrogen ambient for a duration ranging from spike to 300 seconds. Measurements of the sheet resistance, mobility and carrier concentration were taken after both LTP, and the post-LTP thermal processing. Experimental results show that LTP of alternate dopants increases the electrically active carrier concentration of Ga, Al and Sb above solid-solubility. Additionally, the amount of deactivation upon post-LTP thermal processing depends on the alternate dopant species.
机译：传统上，掺杂剂的选择仅限于具有最高固溶性的物质，但是，激光热处理（LTP）基本上不受固溶性的限制。因此，评估由于低固溶性而先前已被排除的替代掺杂物是令人感兴趣的。为此，将〜（14）N，〜（121）Sb（n型），〜（27）Al，〜（70）Ga和〜（115）In（p型）的替代掺杂剂与在LTP和LTP后热处理之后，分别添加了传统的As和B掺杂剂。将掺杂剂注入到相反背景掺杂类型的<100>硅晶片中，该晶片先前已通过1x10〜（15）/ cm〜2剂量的15 keV〜（28）Si〜+注入被非晶化到大约300埃的深度。 5 keV的注入能量足够低，足以将注入的离子限制在非晶层中，但B除外，后者需要2 keV的能量。所有物种的植入剂量分别为1x10〜（14），5x10〜（14）和1.5x10〜（15）/ cm〜2。使用308 nm，18 ns激光脉冲，通量为0.680 J / cm〜2的LTP样品。 LTP后样品的热处理包括在氮气环境中进行900℃快速热退火（RTA），持续时间从尖峰到300秒不等。在LTP和LTP后热处理之后均进行了薄层电阻，迁移率和载流子浓度的测量。实验结果表明，替代掺杂剂的LTP可以将Ga，Al和Sb的电活性载流子浓度提高到固溶度以上。另外，LTP后热处理后的失活量取决于替代的掺杂物种类。

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