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首页> 外文会议>Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California >The Effect of Ge Content in MBE Si_(1-x) Ge_x on the Evolution of {311} Defects
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The Effect of Ge Content in MBE Si_(1-x) Ge_x on the Evolution of {311} Defects

机译：MBE Si_（1-x）Ge_x中Ge含量对{311}缺陷演变的影响

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摘要

Molecular beam epitaxial Si_(1-x)Ge_x layers of various Ge concentrations ranging from 0% to 50% were grown on top of a Si substrate. The wafers were then implanted with a 40 keV, 1 x 10~(14)cm~(-2) Si~+. To study the development of {311} defects, the samples were annealed at 750℃ for times ranging from 0 to 20 minutes. TEM was utilized to observe both the formation and dissolution of the defects. The Si_(1-x)Ge_x samples with ≤ 5% Ge exhibit {311} defect formation and dissolution; however, samples with the Gc content lying between 15% and 50% showed only dislocation loop formation. It is suggested that the decrease in bond strength with increasing Ge content is the reason for the lack of {311} defect formation.
机译：在Si衬底的顶部上生长各种Ge浓度从0％到50％的分子束外延Si_（1-x）Ge_x层。然后将晶片注入40 keV，1 x 10〜（14）cm〜（-2）Si〜+。为了研究{311}缺陷的发展，将样品在750℃下退火0至20分钟。用TEM观察缺陷的形成和溶解。 Ge≤5％的Si_（1-x）Ge_x样品表现出{311}缺陷的形成和溶解；但是，Gc含量在15％至50％之间的样品仅显示位错环的形成。提示随着Ge含量的增加，结合强度的降低是缺乏{311}缺陷形成的原因。

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