首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >Spectroscopic determination of C_2 densities in Ar/H_2/CH_4 and Ar/H_2/C_(60) microwave plasmas for nanocrystalline diamond synthesis
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Spectroscopic determination of C_2 densities in Ar/H_2/CH_4 and Ar/H_2/C_(60) microwave plasmas for nanocrystalline diamond synthesis

机译:光谱法测定纳米晶金刚石合成中Ar / H_2 / CH_4和Ar / H_2 / C_(60)微波等离子体中C_2的密度

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We have measured the steady state concentration of gas phase C_2 in Ar/H_2/CH_4 and Ar/H_2/C_(60) microwave plasms used for the deposition of nanocrystalline diamond films. High sensitivity white light absorption spectroscopy is used to monitor the C_2 density using the d~ PI <- a~3 PI (0,0) vibrational band of C_2 as chamber pressure, microwave power, substrate temperature and feed gas mixtures are varied in both chemistries. Understanding how these parameters influence the C_2 density in the plasma volume provides insight into discharge mechanisms relevant to the deposition of nanocrystalline diamond.
机译:我们已经测量了用于沉积纳米晶金刚石膜的Ar / H_2 / CH_4和Ar / H_2 / C_(60)微波等离子体中气相C_2的稳态浓度。使用高灵敏度白光吸收光谱法,利用C_2的d〜PI <-a〜3 PI(0,0)振动带,随着腔室压力,微波功率,基质温度和进料气体混合物的变化,来监测C_2密度化学。了解这些参数如何影响等离子体体积中的C_2密度,可以提供与纳米晶金刚石沉积相关的放电机理的见解。

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