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首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >In situ monitoring of the effects of gas mixtures on ion beam depositions of diamond-like carbon films
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In situ monitoring of the effects of gas mixtures on ion beam depositions of diamond-like carbon films

机译：原位监测气体混合物对类金刚石碳膜离子束沉积的影响

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A quadrupole mass spectrometer and a total ion-current measuring device have been utilized to monitor the ion compositions of gas mixtures of CH_4/H_2 and CH_4/H_2/O_2 during the deposition for quality control and process optimization. An ultra high vacuum system using a 20 cm diameter RF excited (13.56 MHz) ion gum and a four-axis substrate scanner has been developed for deposition of diamond-like carbon films for electrical, optical, and tribological applications. At a constant RF power of 179W, the mass spectra of gas mixture CH_4/H_2 (1:2.5) showed the most abundant ion is CH_3~+. Addition of O_2 to the ion source has been found to affect the adhesion, deposition rate, and physical and chemical properties of the DLC films. By use of a mass spectrometer with and without the electron beam, the degree of ionization of CH_4 was calculated to be about 10 percent. As the concentration of O_2 was increased, all hydrocarbon ions decreased and H_3O~+ increased, resulting in a decrease in the film growth rate and an increase in etching of Si and glass substrates. In general, the optical bandgap, adsorption coefficients and refractive index decreased as oxygen concentration increased. Raman spectra showed the G-peak position shifted toward the graphitic peak with narrow peak width as oxygen concentration increased. At ultra high vacuum, the coefficient of friction increased with increased adhesion on substrates as oxygen was increased.
机译：四极质谱仪和总离子流测量装置已用于监测沉积过程中CH_4 / H_2和CH_4 / H_2 / O_2的气体混合物的离子组成，以进行质量控制和工艺优化。已经开发出一种超高真空系统，该系统使用直径为20 cm的RF激发（13.56 MHz）离子胶和四轴基底扫描仪，用于沉积类金刚石碳膜，用于电子，光学和摩擦学应用。在179W的恒定RF功率下，气体混合物CH_4 / H_2（1：2.5）的质谱显示，最丰富的离子为CH_3〜+。已经发现向离子源中添加O_2会影响DLC膜的附着力，沉积速率以及物理和化学性质。通过使用带电子束和不带电子束的质谱仪，CH_4的电离度约为10％。随着O_2浓度的增加，所有烃离子减少，H_3O〜+增加，导致膜生长速率下降，Si和玻璃基板的刻蚀增加。通常，光学带隙，吸附系数和折射率随着氧浓度的增加而降低。拉曼光谱显示，随着氧气浓度的增加，G峰位置朝着具有窄峰宽的石墨峰移动。在超高真空下，随着氧气的增加，摩擦系数随着在基材上的附着力增加而增加。

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