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首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >Silicon rapid thermal processing with ripple pyrometry
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Silicon rapid thermal processing with ripple pyrometry

机译：硅快速热处理与波纹高温法

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摘要

Thermal processing in silicon integrated circuit fabrication steps for dopant activation, metal silicides, annealing, and oxidation commonly uses single-wafer furnaces that rapidly heat wafers with incandescent infrared lamps. Radiation pyrometers and thermocouple probes are the principle methods of measuring wafer temperature for closed-loop control of rapid thermal processes. The challenge with thermocouples is in dealing with heat from the lamps and non-ideal thermally resistive wafer contact. The challenge with pyrometry is in compensating for the variable emissivity of wafer surfaces and suppressing interference from the lamps. Typical deposited or grown layers of silicon nitride, silicon dioxide, and polycrystalline silicon can produce dramatic changes in emissivity. Layer thicknesses and composition are generally not known with sufficient accuracy, so a method for real time in situ emissivity compensation is required. Accufiber introduced a "ripple technique" to address this issue. The idea is to use two probes, separately sensing radiation from the wafer and the lamps, and extracting AC and quasi-DC parts from each. The AC signals provide a measure of the reflectivity of the wafer, and thence emissivity, as well as the fraction of reflected lamp radiation present in the DC signals. Lucent Technologies introduced a method of using AC lamp ripple to measure wafer temperatures with two radiation probes at a wall in the furnace. One probe views radiation emanating from the wafer through a gap in the lamp array. The other probe has a wide field of view to include lamp radiation. The accuracy of Lucent devices, determined from process results on wafers with various emissivities, is typically in the range of 12 deg C at three standard deviations.
机译：用于掺杂剂活化，金属硅化物，退火和氧化的硅集成电路制造步骤中的热处理通常使用单晶片炉，该单晶片炉通过白炽红外灯快速加热晶片。辐射高温计和热电偶探头是测量晶片温度的基本方法，用于快速热处理的闭环控制。热电偶的挑战在于处理来自灯的热量和非理想的热阻晶片接触。高温测定法的挑战在于补偿晶片表面的可变发射率并抑制灯的干扰。氮化硅，二氧化硅和多晶硅的典型沉积或生长层会导致发射率发生巨大变化。通常不以足够的精度来知道层的厚度和组成，因此需要用于实时原位发射率补偿的方法。 Accufiber引入了“波纹技术”来解决此问题。这个想法是使用两个探针，分别检测晶片和灯的辐射，并从每个探针中提取交流和准直流部分。 AC信号提供了晶片反射率的度量，并因此测量了发射率，以及DC信号中存在的反射灯辐射的比例。朗讯科技推出了一种使用交流电灯纹波在炉壁上使用两个辐射探头测量晶圆温度的方法。一个探针观察通过灯阵列中的间隙从晶片发出的辐射。另一个探头的视野很广，包括灯的辐射。根据各种发射率的晶圆的处理结果确定的朗讯器件的精度，在三个标准偏差下，通常在12摄氏度的范围内。

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