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首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >Real-time monitoring of semiconductor growth by spectroscopic ellipsometry
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Real-time monitoring of semiconductor growth by spectroscopic ellipsometry

机译：通过光谱椭偏仪实时监控半导体的生长

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摘要

in situ Spectroscopic Ellipsometry (SE) is an optical technique which is well suited for the monitoring of epitaxial semiconductor growth, due to its high surface sensitivity and noninvasive nature. In this work, SE systems were installed on both MBE and MOCVD deposition systems to monitor the epitaxial growth of In_xGa_(1-x)As and In_xAl_(1-x)As compounds on InP substrates. The structures grown include thick lattice matched In_(0.53)Ga_(0.47)As buffer layers (for HBT collectors), and strained RTD structures. SE was used to monitor in real-time layer composition and thickness during growth. To enhance the precision and accuracy of the SE determined growth parameters, it was necessary to optimize the SE data analysis strategies. A methodology to determine the best spectral region for the SE data analysis in the presence of noise and systematic effects (such as angle of incidence uncertainty, detector wavelength shifts, surface roughness, uncertainty in surface temperature, non-ideal growth modes, etc.) is presented. Using the optimized data analysis strategies, long term SE-determined In_xGa_(1-x)As composition accuracy (as verified by ex situ x-ray measurements) of =-0.002 in 'x' was achieved. SE thickness measurements of ultra-thin (<30A) strained AlAs layers were also in excellent agreement (+-0.5A) with real-time photo-emission oscillation measurements.
机译：原位光谱椭偏仪（SE）是一种光学技术，由于其高的表面敏感性和非侵入性，非常适合于监测外延半导体的生长。在这项工作中，将SE系统安装在MBE和MOCVD沉积系统上，以监测InP衬底上In_xGa_（1-x）As和In_xAl_（1-x）As化合物的外延生长。生长的结构包括厚晶格匹配的In_（0.53）Ga_（0.47）As缓冲层（用于HBT集电极）和应变RTD结构。 SE用于监测生长过程中的实时层组成和厚度。为了提高SE确定的生长参数的精度和准确性，有必要优化SE数据分析策略。在存在噪声和系统影响（例如入射角不确定性，探测器波长偏移，表面粗糙度，表面温度不确定性，非理想的生长模式等）的情况下，确定用于SE数据分析的最佳光谱区域的方法。被表达。使用优化的数据分析策略，实现了SE长期确定的'x'= -0.002的In_xGa_（1-x）As组成精度（通过异位x射线测量验证）。超薄（<30A）应变AlAs层的SE厚度测量与实时光发射振荡测量也非常吻合（+ -0.5A）。

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