Monitoring of sidewall spacer etch by optical emission spectroscopy and mass spectroscopy

机译：通过光发射光谱法和质谱法监测侧壁间隔物蚀刻

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Selective etch of SiO_2/poly Si in a high density CF_4+D_2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO_2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.

机译：研究了通过电子回旋共振（ECR）系统产生的高密度CF_4 + D_2等离子体中SiO_2 /多晶硅的选择性刻蚀。使用光发射光谱法和质谱仪监测SiO 2侧壁间隔物蚀刻的终点检测。进行SEM截面分析以确认终点检测和间隔物的形成。

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《Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.157-162|共6页
会议地点 Boston MA(US)
作者
K. Min; J. J. Chambers; G. N. Parsons; J. R. Hauser;
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中图分类一般工业技术;
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Monitoring of sidewall spacer etch by optical emission spectroscopy and mass spectroscopy

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