首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >In situ monitoring of anodic oxide growth on Si (001) by interface second-harmonic generation
【24h】

In situ monitoring of anodic oxide growth on Si (001) by interface second-harmonic generation

机译:通过界面二次谐波生成原位监测Si(001)上的阳极氧化物生长

获取原文
获取原文并翻译 | 示例

摘要

Optical second-harmonic (SH) generation is used to monitor the anodic growth of oxide on a (001) Si surface. The measured SH intensity is dominated by the nonlinear optical response of the space charge region in the Si just below the Si/oxide interface. The interface SH technique can detect the onset of H desorption, identify the flat band potential, and probe the evolution of space charge within the growing oxide layer.
机译:光学二次谐波(SH)生成用于监视(001)Si表面上氧化物的阳极生长。测得的SH强度主要由Si /氧化物界面正下方的Si中的空间电荷区域的非线性光学响应决定。 SH界面技术可以检测H解吸的发生,识别平带电势并探测生长的氧化物层中空间电荷的演变。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号