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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >SPATIALLY RESOLVED CHARACTERIZATION OF ELECTROMIGRATION-INDUCED PLASTIC DEFORMATION IN AL (0.5WT CU) INTERCONNECT
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SPATIALLY RESOLVED CHARACTERIZATION OF ELECTROMIGRATION-INDUCED PLASTIC DEFORMATION IN AL (0.5WT CU) INTERCONNECT

机译：Al（0.5WT％CU）互连中电致塑性塑性变形的空间分辨特征

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摘要

Electromigration during accelerated testing can induce early stage plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in-situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.
机译：加速测试过程中的电迁移会在Al互连线中引起早期塑性变形，最近由白光束扫描X射线微衍射表明。在本文中，我们提供了在原位电迁移实验中单个微米级Al晶粒中产生的位错结构的第一定量分析。各个互连晶粒的劳厄反射在电流流动后显示出明显的条纹。我们证明，在电迁移过程中位错结构的演化是高度不均匀的，并导致形成不成对的随机分布的位错以及几何上必要的位错边界。所有不成对的位错中约有一半被分组在墙内。确定由每个边界和不成对的单个位错的密度产生的取向错误。

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