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首页> 外文会议>Symposium on Structure and Mechanical Properties of Nanophase Materials- Theory and Computer Simulation vs. Experiment Nov 28-30, 2000, Boston, Massachusetts, U.S.A. >Dislocation Models for Strengthening in Nanostructured Metallic Multilayers
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Dislocation Models for Strengthening in Nanostructured Metallic Multilayers

机译：位错模型用于增强纳米结构金属多层。

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摘要

Ultra-high strength metallic multilayers are ideal for investigating the effects of length scales in plastic deformation of metallic materials. Experiments on model systems show that the strengths of these materials increase with decreasing bilayer period following the Hall-Petch model. However, as the layer thickness is reduced to the nm-scale, the number of dislocations in the pile-up approaches one and the pile-up based Hall-Petch model ceases to apply. For nm-scale semi-coherent multilayers, we hypothesize that plastic flow occurs by the motion of single dislocation loops, initially in the softer layer, that deposit misfit type dislocation arrays at the interface and transfer load to the harder phase. The stress concentration eventually leads to slip in the harder phase, overcoming the resistance from the misfit arrays at the interface. A model is developed within the framework of classical dislocation theory to estimate the strengthening from this mechanism. The model predictions are compared with experimentally measured strengths.
机译：超高强度的金属多层材料非常适合用于研究长度尺度对金属材料塑性变形的影响。在模型系统上进行的实验表明，遵循霍尔-皮奇（Hall-Petch）模型，这些材料的强度随着双层周期的减少而增加。但是，随着层厚度减小到纳米级，堆积中的位错数接近1，并且基于堆积的Hall-Petch模型也不再适用。对于纳米级的半相干多层膜，我们假设塑性流动是通过单个位错环的运动发生的，最初是在较软的层中，该错位环在界面处沉积了失配类型的位错阵列，并将载荷转移至较硬的相。应力集中最终导致在较硬的相中滑动，克服了界面处错配阵列的阻力。在经典位错理论的框架内开发了一个模型，以估计这种机制的加强。将模型预测值与实验测得的强度进行比较。

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