Dislocations in Submicron Grain Size and Nanocrystalline Copper

机译：亚微米晶粒尺寸和纳米晶铜的位错

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Using the dislocation model of strain anisotropy in X-ray diffraction peak profile analysis it is shown that in nanocrystalline copper produced by inert gas condensation dislocations are present, at least, down to average grain sizes of the order of 20 nm. Based on the analysis of the dislocation contrast factors it is suggested that with decreasing grain size the proportion of Lomer-Cottrell type dislocations increases.

机译：在X射线衍射峰轮廓分析中使用应变各向异性的位错模型表明，在惰性气体冷凝产生的纳米晶铜中，至少存在低至20 nm数量级的平均晶粒尺寸。根据位错对比因子的分析，建议随着晶粒尺寸的减小，Lomer-Cottrell型位错的比例增加。

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《Symposium on Structure and Mechanical Properties of Nanophase Materials- Theory and Computer Simulation vs. Experiment Nov 28-30, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.1.7.1-1.7.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
T. Ungar; G. Tichy; P. G. Sanders; J. R. Weertman;
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Dept. of General Phys. Eoetvoes University Budapest, H-1518, P.O.B. 32, Budapest, Hungary;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
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5. Dislocations in submicron grain size and nanocrystalline copper [C] . T. Ungar, G. Tichy, P. G. Sanders, MRS Meeting . 2001

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Dislocations in Submicron Grain Size and Nanocrystalline Copper

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