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首页> 外文会议>Symposium F: Third International Conference on Laser Ablation (Cola'95) of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France >Giant laser-induced voltages at room temperature in Pr doped Y-Ba-Cu-O thin films
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Giant laser-induced voltages at room temperature in Pr doped Y-Ba-Cu-O thin films

机译：Pr掺杂Y-Ba-Cu-O薄膜在室温下的巨大激光感应电压

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摘要

Recent reports on high transient transverse voltages at room temperature in Y_1Ba_2Cu_3O_7 (YBCO) thin films exposed to laser irradiation show that the thermoelectric fields transverse to a laser-induced temperature gradient are caused by the nonzero off diagonal elements of the Seebeck tensor. To further enhance these signals of a size approximately 0.1 V/K we used the dependence of the Seebeck coefficient on the in plane thermoelectric properties of YBCO. Thin films with a partial substitution of Y by Pr epitaxially grown on Strontiumtitanate single crystals cut with a tilt angle of 10 deg between substrate surface and the cubic axis are exposed to UV photon pulses (lambda=248 nm, pulse length 28 ns, fluences 5-200 mJ/cm~2) at room temperature. Compared to the undoped films the an enhancement of the signal by a factor of 20 is found for Y_0.8Pr_0.2Ba_2Cu_3O_7 films. Further increase of the doping level, however, caused a decrease of this peak values. This result is ascribed to the anisotropic changes of the Seebeck tensor matrix components upon doping.
机译：关于在室温下暴露于激光辐照的Y_1Ba_2Cu_3O_7（YBCO）薄膜中的高瞬态横向电压的最新报道表明，横向于激光感应温度梯度的热电场是由塞贝克张量的非零偏离对角元素引起的。为了进一步增强这些大小约为0.1 V / K的信号，我们使用了塞贝克系数对YBCO平面内热电特性的依赖性。在衬底表面和立方轴之间以10度倾斜角切割的钛酸锶单晶上外延生长的Pr置换的部分被Y取代的Y薄膜暴露于紫外光子脉冲（λ= 248 nm，脉冲长度28 ns，通量5 -200 mJ / cm〜2）在室温下。与未掺杂的薄膜相比，对于Y_0.8Pr_0.2Ba_2Cu_3O_7薄膜，信号增强了20倍。然而，掺杂水平的进一步提高导致该峰值降低。该结果归因于掺杂时塞贝克张量矩阵分量的各向异性变化。

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