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Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho~(3+):YAG laser

机译:紧凑高效的中红外激光源:Ho〜(3 +):YAG激光泵浦的OP-GaAs OPO

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Due to a wide transparency range (0.9-17 μm), a low absorption loss (~ 0.01 cm~(-1)), and a laser damage threshold comparable to ZGP crystals (~ 2 J/cm~2), combined with excellent nonlinear, thermal and mechanical properties, quasi-phase-matched orientation-patterned gallium arsenide (OP-GaAs) crystals are well adapted for efficient mid-infrared optical parametric oscillators (OPOs). The paper discusses the best results obtained, to our knowledge, with an OP-GaAs OPO pumped by a Q-switched 2.09 μm Ho~(3+):YAG laser. The compact (33 × 48 cm) high-repetition rate source developed allows to achieve 4.0 W of average output power in the 3-5 μm range at 40 kHz repetition rate with a 45 % slope efficiency and a very good beam quality (M~2< 1.8). 6.4 W were obtained at 70 kHz with a 51 % slope efficiency, and 7.7 W at 100 kHz with a 46 % slope efficiency. At 40 kHz and 70 kHz, an optical damage occurred at a fluence of 1.9 J/cm~2 and 1.5 J/cm~2 respectively. The power is limited by the OP-GaAs crystal thickness and is expected to be scaled in thicker samples recently fabricated.
机译:由于具有宽的透明度范围(0.9-17μm),低的吸收损耗(〜0.01 cm〜(-1))和可与ZGP晶体媲美的激光损伤阈值(〜2 J / cm〜2),以及出色的非线性,热和机械性能,准相位匹配的取向图案砷化镓(OP-GaAs)晶体非常适合于高效的中红外光学参量振荡器(OPO)。据我们所知,本文讨论了由Q开关2.09μmHo〜(3 +):YAG激光器泵浦的OP-GaAs OPO获得的最佳结果。开发的紧凑型(33×48 cm)高重复频率源允许以40 kHz重复频率在3-5μm范围内获得4.0 W的平均输出功率,斜率效率为45%,并且光束质量非常好(M〜 2 <1.8)。在70 kHz时获得6.4 W的斜率,效率为51%,在100 kHz时获得7.7 W的斜率效率为46%。在40 kHz和70 kHz时,分别以1.9 J / cm〜2和1.5 J / cm〜2的注量发生光学损伤。功率受OP-GaAs晶体厚度的限制,并有望在最近制造的较厚样品中按比例缩放。

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