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首页> 外文会议>Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense >Broadband and High-Sensitivity Terahertz-Wave Detection Using Fermi-Level Managed Barrier Diode
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Broadband and High-Sensitivity Terahertz-Wave Detection Using Fermi-Level Managed Barrier Diode

机译：费米级可控势垒二极管的宽带和高灵敏度太赫兹波检测

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摘要

An all-semiconductor-based hetero-barrier rectifier, named a Fermi-level managed barrier diode (FMB diode), was developed for enabling broadband and low-noise THz-wave detection. The barrier height was controlled by the doping in n-type InGaAs so that a very small height barrier (about 53 meV) could be realized for obtaining a small intrinsic differential resistance (about 23 Ω/μm~2) and a large output current density (more than 5 × 10~3 A/cm~2). The fabricated quasi-optical module was operated at frequencies from 200 GHz to 1 THz at room temperature. The typical zero-biased voltage sensitivity was 1280 V/W at 300 GHz, which was higher than the reported best results for InP-based zero-biased broadband Schottky barrier diodes.
机译：为了实现宽带和低噪声太赫兹波检测，开发了一种基于全半导体的异质栅整流器，称为费米级可控势垒二极管（FMB二极管）。通过在n型InGaAs中掺杂来控制势垒高度，从而可以实现非常小的高度势垒（约53 meV），从而获得小的固有差分电阻（约23Ω/μm〜2）和大的输出电流密度（大于5×10〜3 A / cm〜2）。所制造的准光学模块在室温下以200 GHz至1 THz的频率工作。在300 GHz时，典型的零偏置电压灵敏度为1280 V / W，高于报道的基于InP的零偏置宽带肖特基势垒二极管的最佳结果。

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