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首页> 外文会议>Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense >Inspection of Mechanical and Electrical Properties of Silicon Wafers using Terahertz Tomography and Spectroscopy
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Inspection of Mechanical and Electrical Properties of Silicon Wafers using Terahertz Tomography and Spectroscopy

机译：使用太赫兹层析成像和光谱学检查硅晶片的机械和电性能

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摘要

Two different THz applications in the semiconductor industry were explored and validated against established reference measurement techniques and simulations. The first application investigated the possibility of measuring mechanical deformation behaviour of silicon wafers. Time-domain THz tomography mapping scans were carried out to measure wafer thickness and flatness, both in the native state and under different external mechanical loads. These measurements were carried out for a variety of wafers, and the ensuing deformation maps used to validate newly developed numerical simulation models for wafer deformation, and vice versa. In the second part of this paper, carrier dynamics of optically injected charges were investigated by THz spectroscopy. THz pump/probe measurements were carried out in transmission and reflection arrangements on silicon wafers illuminated by a metal halide light source. The light source generates free charge carriers in the semiconductor material that affect the transmission and reflection properties of the semiconductor material. The results of the THz measurements are compared to established standard techniques, like microwave-detected photo-conductance decay (MWPCD) or quasi-steady-state photo conductance (QSSPC) measurements. The defective areas identified with the THz measurements are in good agreement with the defective areas identified by the reference methods. A common benefit of time-domain THz measurements is that the wafer thickness, which is an important measure for the interaction volume of the THz radiation with the semiconductor material, can be calculated from the time-domain signals. The results indicate that THz spectroscopy and imaging can be valuable tools for defect analysis and quality control of silicon wafers, especially since the measurement is fully contact-free and can determine mechanical and electrical properties within a single modality.
机译：针对已建立的参考测量技术和仿真，探索并验证了半导体工业中两种不同的太赫兹应用。第一个应用研究了测量硅晶片机械变形行为的可能性。进行了时域THz层析成像扫描，以测量原始状态和不同外部机械负载下的晶片厚度和平坦度。对各种晶片进行了这些测量，随后的变形图用于验证新开发的晶片变形数值模拟模型，反之亦然。在本文的第二部分中，通过太赫兹光​​谱研究了光注入电荷的载流子动力学。太赫兹泵浦/探针测量是在透射和反射装置中对由金属卤化物光源照射的硅片进行的。光源在半导体材料中产生影响半导体材料的透射和反射特性的自由电荷载流子。将THz测量的结果与已建立的标准技术进行比较，例如微波检测到的光电导衰减（MWPCD）或准稳态光电导（QSSPC）测量。用太赫兹测量值确定的缺陷区域与参考方法确定的缺陷区域高度吻合。时域太赫兹测量的一个共同好处是，可以从时域信号中计算出晶片厚度，该厚度是太赫兹辐射与半导体材料相互作用体积的重要量度。结果表明，太赫兹光谱学和成像可以成为用于硅晶片缺陷分析和质量控制的有价值的工具，尤其是因为测量是完全无接触的，并且可以确定单一模态下的机械和电气性能。

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