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Progress Towards Dual Vertical Slot Modulator For Millimeter Wave Photonics

机译:毫米波光子学双垂直缝隙调制器的研究进展

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Dual vertical slot modulators leverage the field enhancement provided by the continuity of the normal electric flux density across a boundary between two dielectrics to increase modal confinement and overlap for the propagating optical and RF waves. This effect is achieved by aligning a conventional silicon-based optical slot waveguide with a titanium dioxide RF slot. The TiO_2 has an optical refractive index lower than silicon, but a significantly higher index in the RF regime. The dual slot design confines both the optical and RF modes to the same void between the silicon ribs of the optical slot waveguide. To obtain modulation of the optical signal, the void is filled with an organic electro optic material (OEOM), which offers a high optical non-linearity. The optical and RF refractive index of the OEOM is lower than silicon and can be deposited through spin processing. This design causes an extremely large mode overlap between the optical field and the RF field within the non-linear OEOM material which can result in a device with a low V_π and a high operational bandwidth. We present work towards achieving various prototypes of the proposed device, and we discuss the fabrication challenges inherent to its design.
机译:双垂直缝隙调制器利用在两个电介质之间的边界上正常电通量密度的连续性所提供的场增强,来增加传播的光波和RF波的模态限制和重叠。通过将常规的基于硅的光缝隙波导与二氧化钛RF缝隙对准,可以实现此效果。 TiO_2的光学折射率低于硅,但在RF范围内折射率明显较高。双缝隙设计将光学和RF模式都限制在光学缝隙波导的硅肋之间的同一空隙中。为了获得光信号的调制,在空隙中填充有机电光学材料(OEOM),该材料可提供高的光学非线性。 OEOM的光学和RF折射率低于硅,可以通过旋转工艺沉积。这种设计导致非线性OEOM材料内的光场与RF场之间出现极大的模式重叠,这可能导致器件的V_π低且工作带宽高。我们提出了实现拟议器件的各种原型的工作,并讨论了其设计所固有的制造挑战。

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