Room temperature generation of THz radiation in GaN quantum wells structures

机译：GaN量子阱结构中室温产生THz辐射

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Emission of terahertz (THz) radiations from interdigitated GaN quantum-wells structures under DC-bias has been measured at room temperature. This measurements has been performed by a 4K Si-Bolometer associated with a Fourier Transform Spectrometer. Using an analytical model, we have shown that the observed peak at approximately 3 THz due to 2D ungated plasma-waves oscillations in the quantum well, is emitted by the metallic contacts of our device acting as antennas.

机译：在室温下，已测量了在直流偏置下从叉指型GaN量子阱结构发射的太赫兹（THz）辐射。该测量是通过与傅立叶变换光谱仪关联的4K Si-Bolometer进行的。使用分析模型，我们已经表明，由于量子阱中的2D非电化等离子体波振荡，在大约3 THz处观察到的峰值是由我们用作天线的设备的金属触点发出的。

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来源
《Terahertz, RF, millimeter, and submillimeter-wave technology and applications VI》|2013年|862409.1-862409.7|共7页
会议地点 San Francisco CA(US)
作者
A. Penot; J. Torres; P. Nouvel; L. Varani; F. Teppe; C. Consejo; N. Dyakonova; W. Knap; Y. Cordier; S. Chenot; M. Chmielowska; J-P. Faurie; B. Beaumont; P. Shiktorov; E. Starikov; V. Gruzinskis;
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Institut d'Electronique du Sud UMR 5214 - TeraLab, Universite Montpellier 2, France;

Institut d'Electronique du Sud UMR 5214 - TeraLab, Universite Montpellier 2, France;

Institut d'Electronique du Sud UMR 5214 - TeraLab, Universite Montpellier 2, France;

Institut d'Electronique du Sud UMR 5214 - TeraLab, Universite Montpellier 2, France;

Laboratoire Charles Coulomb UMR 5221 - TeraLab, Universite Montpellier 2, France;

Laboratoire Charles Coulomb UMR 5221 - TeraLab, Universite Montpellier 2, France;

Laboratoire Charles Coulomb UMR 5221 - TeraLab, Universite Montpellier 2, France;

Laboratoire Charles Coulomb UMR 5221 - TeraLab, Universite Montpellier 2, France;

Centre de Recherche sur l'Hetero-Epitaxie et ses Applications - UPR 10, Valbonne, France;

Centre de Recherche sur l'Hetero-Epitaxie et ses Applications - UPR 10, Valbonne, France;

Centre de Recherche sur l'Hetero-Epitaxie et ses Applications - UPR 10, Valbonne, France;

Lumilog-Saint Gobain, Vallauris, France;

Lumilog-Saint Gobain, Vallauris, France;

Semiconductor Physics Institute, Vilnius, Lithuania;

Semiconductor Physics Institute, Vilnius, Lithuania;

Semiconductor Physics Institute, Vilnius, Lithuania;

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正文语种 eng
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关键词
THz emission; GaN quantum wells;

机译：太赫兹发射； GaN量子阱;

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专利

1. STRAIN INDUCED ACTIVE LAYER DESIGN OF GaN-THz QUANTUM GaN-THz QUANTUM [J] . TARIQ MANZURMEHDI ANWAR International Journal of High Speed Electronics and Systems (IJHSES) . 2011,第3期

机译：GaN-THz量子线的应变诱导有源层设计
2. Optically Pumped Electrically Driven THz Generation–-An Approach for an Efficient Room-Temperature THz Quantum Cascade Laser? [J] . Waldmueller I., Chow W.W., Wanke M.C. IEEE journal of selected topics in quantum electronics . 2007,第期

机译：光泵浦电驱动THz产生-一种有效的室温THz量子级联激光器的方法？
3. GENERATION OF TERAHERTZ RADIATION IN LED HETEROSTRUCTURES WITH MULTIPLE InGaN/GaN QUANTUM WELLS AT TWO-PHOTON EXCITATION BY FEMTOSECOND LASER PULSES [J] . Prudaev I. A., Sarkisov S. Yu, Tolbanov O. P., Russian physics journal . 2015,第2期

机译：费米激光脉冲在两光子激发下在具有多个InGaN / GaN量子阱的LED异质结构中产生THERHERTZ辐射
4. Room temperature generation of THz radiation in GaN quantum wells structures [C] . A. Penot, J. Torres, P. Nouvel, SPIE Conference on Terahertz, RF, millimeter, and submillimeter-wave technology and applications . 2013

机译：GaN量子井结构中THz辐射的室温产生
5. Generation of narrowband THz pulses and THz studies of ultrafast phenomena in semiconductor quantum wells. [D] . Danielson, Jeremy R. 2008

机译：窄带太赫兹脉冲的产生以及半导体量子阱中超快现象的太赫兹研究。
6. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires [O] . Ji-Hyeon Park, Arjun Mandal, San Kang, -1

机译：使用在空心n-GaN纳米线上形成的非极性同轴InGaN / GaN多量子阱结构产生氢
7. Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature [O] . Penot A., Torres J., Nouvel P., 2014

机译：在室温下，叉指型GaN量子阱结构中的2D等离子体振荡会产生THz辐射
8. Observation of THz Oscillations and Efficient THz Emission from Contacted Low Temperature Grown GaAs Structures. [R] . Steen, C., Tautz, S., Kiesel, P., 2000

机译：接触低温生长Gaas结构的THz振荡和高效THz发射的观测。

Room temperature generation of THz radiation in GaN quantum wells structures

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