Numerical Simulation of Terahertz Plasmons in Gated Graphene Structures

机译：门控石墨烯结构中太赫兹等离子体的数值模拟

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Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene are studied by the numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a single-grating-gate structure is studied, and the gate-voltage tunability of its frequency as well as the coupling effect of plasmons in the gated and ungated regions are revealed. It is demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and due to the short- and finite-range disorder scattering can be on the order of 10~(11) s~(-1), depending on the level of disorders. In addition, the damping due to the source and drain contacts is reported and its mechanism is discussed.

机译：通过基于玻尔兹曼方程的数值模拟研究了二维等离子体在石墨烯中的频散和阻尼机理。研究了单栅栅结构中的基本等离子体激元模式，揭示了其频率的栅极电压可调性以及在门控和非门控区域中等离子体激元的耦合效应。结果表明，在室温下，声子在室温下的散射以及短程和有限域无序散射的阻尼率可以在10〜（11）s〜（-1）的范围内，具体取决于声级。疾病。另外，报告了由于源极和漏极接触引起的阻尼，并讨论了其机理。

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《Terahertz, RF, millimeter, and submillimeter-wave technology and applications VI》|2013年|862412.1-862412.8|共8页
会议地点 San Francisco CA(US)
作者
A. Satou; V. Ryzhii; F. T. Vasko; V. V. Mitin; T. Otsuji;
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作者单位

Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260-1920, USA;

Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260-1920, USA;

Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

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正文语种 eng
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关键词
graphene; plasmon; terahertz; grating gates; weighted-essentially-nonoscillatory scheme;

机译：石墨烯等离子体激元太赫兹格栅门加权基本非振荡方案;

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1. Gate-Voltage Tunability of Plasmons in Single-Layer Graphene Structures—Analytical Description, Impact of Interface States, and Concepts for Terahertz Devices [J] . Rakheja Shaloo, Sengupta Parijat Nanotechnology, IEEE Transactions on . 2016,第1期

机译：单层石墨烯结构中等离子体的栅极电压可调谐性—太赫兹器件的分析说明，界面状态的影响和概念
2. Broadband gate-tunable terahertz plasmons in graphene heterostructures [J] . Yao Baicheng, Liu Yuan, Huang Shu-Wei, Nature photonics . 2018,第1期

机译：石墨烯异质结构中的宽带栅极可调太赫兹等级
3. Terahertz modulation based on surface plasmon resonance by self-gated graphene [J] . Qian Zhenhai, Yang Dongxiao, Wang Wei Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2018,第期

机译：基于表面等离子体共振的太赫兹调制通过自栅石墨烯
4. Numerical simulation of terahertz plasmons in gated graphene structures [C] . A. Satou, V. Ryzhii, F. T. Vasko, SPIE Conference on Terahertz, RF, millimeter, and submillimeter-wave technology and applications . 2013

机译：栅极石墨烯结构中太赫兹等级的数值模拟
5. Performance of Inelastic Structures on Mitigated and Unmitigated Liquefiable Soils: Evaluation of Numerical Simulations with Centrifuge Tests [D] . Ramirez, Jenny 2019

机译：减缓和未减缓可液化土壤上非弹性结构的性能：离心试验数值模拟的评估
6. Broadband terahertz absorber based on multi-band continuous plasmon resonances in geometrically gradient dielectric-loaded graphene plasmon structure [O] . Jiawen Yang, Zhihong Zhu, Jianfa Zhang, -1

机译：几何梯度介电负载石墨烯等离子体激元结构中基于多频带连续等离子体激元共振的宽带太赫兹吸收器
7. Gate-Voltage Tunability of Plasmons in Single and Multi-layer Graphene Structures: Analytical Description and Concepts for Terahertz Devices [O] . Rakheja, Shaloo, Sengupta, Parijat 2015

机译：单层和多层石墨烯中等离子体的栅极电压可调性结构：太赫兹器件的分析描述和概念
8. Plasmon Enhanced Electron Drag and Terahertz Photoconductance in a Grating-Gated Field-Effect Transistor with Two-Dimensional Electron Channel [R] . Aizin, G. 2006

机译：具有二维电子通道的光栅门控场效应晶体管中的等离子体增强电子阻力和太赫兹光电导

Numerical Simulation of Terahertz Plasmons in Gated Graphene Structures

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