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Elements of Thermodynamics for the Understanding and Design of Crystal Growth Processes

机译：用于理解和设计晶体生长过程的热力学要素

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The fundamentals of thermodynamics from the view of crystal growth are compiled in a compressive manner. The lecture starts with clarification of basic phenomena at formation of crystalline phases: the dialectics between order and disorder, phase transitions of first- and second-order. After that the thermodynamic potential and equilibrium thermodynamics of phase relationships of systems consisting of one and two (or more) components as well as the chemical potential of mixed phases (solid solutions) are discussed. The energetic contribution of phase boundaries (i.e. interfaces) is shown. In the centre of interest is the approach to basis types of phase diagrams using examples of advanced crystal growth materials: one-component systems (carbon, i.e. diamond), two-component systems of ideal mixing (Ge-Si) and non-ideal mixing, monotectic, eutectic and peritectic diagrams, systems with intermediate compounds melting congruently (GaAs) and incongruently (SrPrGaO_2), ternary systems (Pb-Sn-Te). A special section deals with problems of existence regions and non-stoichiometry in compounds. The in-situ vapour pressure control of stoichiometry during melt growth (CdTe, ZnSe) using the P-T-x - projections of the phase diagrams is demonstrated in detail. The review concludes with some fundamentals of nonequilibrium states and introduces to the driving force of crystallization, nucleation process, kinetic phase diagrams and linear nonequilibrium (irreversible) thermodynamics.
机译：从晶体生长的角度来看，热力学的基本原理是以压缩方式编制的。讲座从澄清晶相形成的基本现象开始：有序和无序之间的辩证法，一阶和二阶的相变。之后，讨论了由一种和两种（或多种）组分组成的系统的相关系的热力学势和平衡热力学，以及混合相（固溶体）的化学势。显示了相界（即界面）的能量贡献。关注的焦点是使用先进的晶体生长材料示例来确定相图基础类型的方法：单组分系统（碳，即金刚石），理想混合（Ge-Si）和非理想混合的两组分系统，单晶，共晶和包晶图，中间化合物完全熔化（GaAs）和不均匀熔化（SrPrGaO_2）的系统，三元系统（Pb-Sn-Te）。有一个特殊的部分涉及化合物的存在区域和非化学计量问题。详细说明了使用相图的P-T-x-投影预测熔体生长过程中化学计量的原位蒸气压（CdTe，ZnSe）。综述以非平衡态的一些基本原理作了总结，并介绍了结晶的驱动力，成核过程，动力学相图和线性非平衡（不可逆）热力学。

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