Influence of doping concentration on the etching rate of GaAs studied by atomic force microscopy

机译：原子力显微镜研究掺杂浓度对GaAs刻蚀速率的影响

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In this work, the effects of doping concentration on the etching rate of GaAs were investigated. The fabrication of several etching steps on each sample, forming an "etching staircase," enabled the use of atomic force microscopy for the determination of the etching rate. We have employed a common etching agent and samples in which the only varying parameter was the bulk doping concentration. A strong correlation between etching rate and doping concentration was found, indicated by a decrease in the etching rate as the bulk doping concentration is increased. The experimental results were well accounted for by an oxidation-reduction process, which rules the etching process in the present case.

机译：在这项工作中，研究了掺杂浓度对GaAs蚀刻速率的影响。在每个样品上制造几个蚀刻步骤，形成一个“蚀刻阶梯”，使得能够使用原子力显微镜来确定蚀刻速率。我们采用了一种常见的蚀刻剂和样品，其中唯一变化的参数是体掺杂浓度。发现蚀刻速率与掺杂浓度之间存在很强的相关性，这表明随着体掺杂浓度的增加，蚀刻速率降低。通过氧化还原过程很好地说明了实验结果，该氧化还原过程在当前情况下支配着蚀刻过程。

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《third annual Atomic Force Microscopy/Scanning Tunneling Microscopy Symposium at the Omni Inner Harbor Hotel in Baltimore, Maryland, from May 9 to 12, 1998.》|1998年|p.169-173|共5页
会议地点 Baltimore MD(US);Baltimore MD(US)
作者
R.S. Freitas; B.R.A. Neves; J.F. Sampaio; W.N. Rodrigues; M.S. Andrade; M.V.B. Moreira; A.G. de Oliveira;
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中图分类机械、仪表工业;
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Influence of doping concentration on the etching rate of GaAs studied by atomic force microscopy

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