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首页> 外文会议>Third European conference on radiation and its effects on components and systems >0.6μm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8K×16 DUAL PORT RAM AND SEA OF GATES
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0.6μm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8K×16 DUAL PORT RAM AND SEA OF GATES

机译：具有防辐射功能的0.6μmCMOS技术在8K×16双端口RAM和门的海面中的应用

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摘要

After a recall of options selected to harden a 0.6μm CMOS technology against the two major radiation concerns of the space environment, total dose and heavy ions induced LATCH-UP, thus highlighting DUAL USE approach in place at MATRA MHS since many years, data gathered during Dual Port Ram and Sea of Gates circuits' radiation tests are developped. Impact of the dimension of various storing elements to the upset sensitivity is assessed. Finally, as natural trend is to reduce global power consumption of airborne applications although increasing the overall performances of systems, pro and cons of using reduced 3.3V power supply are pointed.
机译：在召回了一些选择权，这些选择权是为了使0.6μmCMOS技术针对空间环境的两个主要辐射问题而硬化之后，总剂量和重离子引起了LATCH-UP，因此突出了自多年以来在MATRA MHS实施的双重使用方法，收集了数据在双口公羊和盖茨海航道的辐射测试期间，开发了这种电路。评估各种存储元件的尺寸对翻转灵敏度的影响。最后，由于自然的趋势是减少机载应用的全球功耗，尽管提高了系统的整体性能，所以指出了使用降低的3.3V电源的利弊。

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