Widening The Range in Measuring Neutron Fluences with PIN Silicon Diodes

机译：使用PIN硅二极管扩大测量中子通量的范围

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Widening the range in measuring 1 MeV(Si) neutron fluences from 10~9 to 10~(13) n.cm~(-2) is obtained from a new reading system associated with an improved procedure (by heating the diodes).rnResults associated with different neutron sources are given using the displacement Kerma approved by ASTM E722-93.

机译：新的读数系统通过改进的程序（通过加热二极管）获得了将1 MeV（Si）中子注量的测量范围从10〜9扩大到10〜（13）n.cm〜（-2）。使用ASTM E722-93批准的位移Kerma给出了与不同中子源相关的结果。

著录项

来源
《Third European conference on radiation and its effects on components and systems》|1995年|476-480|共5页
会议地点 Arcachon(FR);Arcachon(FR)
作者
J. MOMN; J.C. ARNOUD; J. DAVID; P. ZYROMSKI;
展开▼
作者单位

C.E.A. Valduc, 21120 Is-sur-Tille France;

C.E.A. Valduc, 21120 Is-sur-Tille France;

C.E.A. Valduc, 21120 Is-sur-Tille France;

C.E.A. Valduc, 21120 Is-sur-Tille France;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类辐射防护;
关键词

相似文献

外文文献
中文文献
专利

1. APS -Annual Meeting of the APS Four Corners Section- Event - A Method to Measure Real-Time Charged Beam Fluence Above 10$^{mathrm{16}}$ 1-MeV-neutron equivalent/cm$^{mathrm{2}}$ using 3D Silicon Diodes [J] . Ivan Rajen Bulletin of the American Physical Society . 2017,第17期

机译：APS-APS四角分会年会-事件-测量10 $ ^ {mathrm {16}} $ 1-MeV中子当量/ cm $ ^ {mathrm {2}}以上的实时带电束通量的方法$使用3D硅二极管
2. Measuring Fluence of Fast Neutrons with Planar Silicon Detectors [J] . N. I. Zamyatin, A. E. Cheremukhin, A. I. Shafronovskaya Physics of particles and nuclei letters . 2017,第5期

机译：用平面硅探测器测量快速中子的光线
3. Measuring fluence of fast neutrons with planar silicon detectors [J] . N. I. Zamyatin, A. E. Cheremukhin, A. I. Shafronovskaya Physics of particles and nuclei letters . 2017,第5期

机译：用平面硅探测器测量快速中子的光线
4. Widening the range in measuring neutron fluences with PIN silicon diodes [C] . Morin, J., Arnoud, . 1996

机译：使用PIN硅二极管扩大中子注量的测量范围
5. DEVELOPMENT OF A DEEP TRAP MODEL FOR THE CAPACITANCE CHARACTERISTICS OF SILICON POSITIVE P - N - POSITIVE N DIODES IRRADIATED WITH FAST NEUTRONS [D] . CRABBE, JAMES STANLEY -1

机译：快中子辐照硅正P-N-正N二极管电容特性的深陷阱模型的建立。
6. Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection [O] . Linyue Liu, Ao Liu, Song Bai, -1

机译：D-T聚变中子检测中碳化硅肖特基二极管检测器的抗辐射性
7. Dependence of silicon PIN diode electrical characteristics on proton fluence [O] . T. Čeponis, A. Balčytis, A. Dzimidavičius, 2010

机译：硅引脚二极管电气特性对质子的依赖性
8. Analytical Neutronic Studies Correlating Fast Neutron Fluence to Material Damage in Carbon, Silicon, and Silicon Carbide [R] . 2011

机译：分析中子研究将快中子注量与碳，硅和碳化硅中的材料损伤联系起来

Widening The Range in Measuring Neutron Fluences with PIN Silicon Diodes

摘要

著录项

相似文献

相关主题

期刊订阅