Oxide Confined 1.3#mu#m InAsP Strained-Layer QW Lasers with Low Threshold Current Operation

机译：低阈值电流操作的氧化物受限1.3＃mu＃m InAsP应变层QW激光器

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A very low threshold current of 3.6mA was achieved in 1.3#mu#m InAsP strained-layer quantum well ridge waveguide lasers with Al-oxide current confinement layers. Strain-compensated AlAs/InP/AlInAs super-lattice layer, grown on InP substrate using gas source-MBE, is used for oxidation.

机译：在具有氧化铝电流限制层的1.3＃μ＃m InAsP应变层量子阱脊波导激光器中，获得了非常低的3.6mA阈值电流。使用气体源MBE在InP衬底上生长的应变补偿AlAs / InP / AlInAs超晶格层用于氧化。

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来源
《Third optoelectronics and communications conference : Technical digest》|1998年|p.340-341|共2页
会议地点 Chiba(JP);Chiba(JP)
作者
N.Iwai; T.Mukaihara; N.Yamanaka; K.Kumada; H.Shimizu; A.Kasukawa;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Low threshold current 1.3 /spl mu/m InAsP QW ACIS lasers [J] . Iwai N., Mukaihara T. Electronics Letters . 1998,第9期

机译：低阈值电流1.3 / spl mu / m InAsP QW ACIS激光器
2. High-performance 1.3-/spl mu/m InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers [J] . Iwai N., Mukaihara T. IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：高性能1.3- / splμm/ m InAsP应变层量子阱ACIS（氧化铝受限内条纹）激光器
3. High-performance 1.3-Μm InAsP strained-layer quantum-well ACIS(Al-oxide confined inner stripe) lasers [J] . Iwai N., Mukaihara T., Yamanaka N., IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：高性能1.3μmInAsP应变层量子阱ACIS（氧化铝受限内条纹）激光器
4. Oxide Confined 1.3#mu#m InAsP Strained-Layer QW Lasers with Low Threshold Current Operation [C] . N.Iwai, T.Mukaihara, N.Yamanaka, Optoelectronics and communications conference . 1998

机译：氧化物限制1.3 #mu #m不适用具有低阈值电流操作的应变层QW激光器
5. An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs) [D] . Chuang, Hsueh-hua 2007

机译：氧化物受限垂直腔面发射激光器（VCSEL）中稳态电流分布的迭代模型
6. Fast Swept-Wavelength Low Threshold-Current Continuous-Wave External Cavity Quantum Cascade Laser [O] . Xuefeng Jia, Lijun Wang, Zhiwei Jia, 2018

机译：快速扫频低阈值电流连续波外部腔量子级联激光器
7. Current self-distribution effects in oxide-confined vertical-cavity surface-emitting lasers [O] . Mulet Josep, Balle Salvador, Arias J., 2013

机译：氧化物限制的垂直腔面发射激光器中的电流自分布效应
8. Low-Threshold InGaAs Strained-Layer Quantum-Well Lasers (Lambda=0.98 Micrometer)with GaInP Cladding Layers and Mass-Transported Buried Heterostructure [R] . Liau, Z. L., Palmateer, S. C., Groves, S. H., 1992

机译：具有GaInp包层和质量传输埋层异质结构的低阈值InGaas应变层量子阱激光器（λ= 0.98微米）

Oxide Confined 1.3#mu#m InAsP Strained-Layer QW Lasers with Low Threshold Current Operation

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