Highly reliable 0.98#mu#m laser diodes with a window structure fabricated by Si-ion implantation

机译：通过硅离子注入制成的具有窗口结构的高度可靠的0.98＃μ＃m激光二极管

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We report on highly reliable 0.98 #mu#m laser diodes (LDs) with a window structure using Si ion implantation followed by thermal annealing. Such Lds have operated very stable over 10,000 hours and they have achieved a mean time to failure of 220,000 hours. No catastrophic optical damage has been observed up to thermally limited maxiumum output power even after operation for 1,000 hours under the condition of 50 deg C at 150 or 200mW.

机译：我们报道了一种高度可靠的0.98＃mu＃m激光二极管（LD），其具有采用Si离子注入然后进行热退火的窗口结构。这样的Lds在10,000个小时内已经非常稳定地运行，并且平均故障时间达到220,000个小时。即使在50摄氏度，150或200mW的条件下运行1,000小时后，在达到热限制的最大输出功率时也未观察到灾难性的光学损坏。

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来源
《Third optoelectronics and communications conference : Technical digest》|1998年|p.546-547|共2页
会议地点 Chiba(JP);Chiba(JP)
作者
S.Yamamura; K.Shigihara; K.Kawasaki; Y.Nagai; M.Miyashita; A.Takemoto; H.Higuchi;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. High-power and highly reliable operation of Al-Free InGaAs-InGaAsP 0.98-/spl mu/m lasers with a window structure fabricated by Si ion implantation [J] . Hiramoto K., Sagawa M. IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：具有通过硅离子注入制造的窗口结构的无铝InGaAs-InGaAsP 0.98- / spl mu / m激光器的高功率和高可靠性操作
2. High-power and highly reliable operation of Al-Free InGaAs-InGaAsP0.98-Μm lasers with a window structure fabricated by Si ionimplantation [J] . Hiramoto K., Sagawa M., Kikawa T., IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：通过硅离子注入制造的具有窗口结构的无铝InGaAs-InGaAsP0.98-μm激光器的高功率和高可靠性操作
3. High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD) [J] . Hidehiro Taniguchi, Hirotatsu Ishii, Ryuichiro Minato, 電気学会論文誌 C:電子·情報·システム部門誌 . 2008,第5期

机译：具有无杂质空位无序（IFVD）制成的具有窗口结构的高功率，高可靠性915 nm激光器
4. Highly reliable 0.98#mu#m laser diodes with a window structure fabricated by Si-ion implantation. [C] . S.Yamamura, K.Shigihara, K.Kawasaki, Optoelectronics and communications conference . 1998

机译：高度可靠的0.98＃MU＃M激光二极管，具有由Si离子植入制备的窗口结构。
5. Highly stable amorphous silicon thin film transistors and integration approaches for reliable organic light emitting diode displays on clear plastic . [D] . Hekmatshoar, Bahman. 2010

机译：高度稳定的非晶硅薄膜晶体管及其在透明塑料上可靠的有机发光二极管显示器的集成方法。
6. Using femtosecond laser to fabricate highly precise interior three-dimensional microstructures in polymeric flow chip [O] . Chia-Yu Lee, Ting-Chou Chang, Shau-Chun Wang, 2010

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7. High Power and High Reliable 915 nm Lasers with Window Structure Fabricated by Impurity Free Vacancy Disordering (IFVD) [O] . Hidehiro Taniguchi, Hirotatsu Ishii, Ryuichiro Minato, 2008

机译：高功率和高可靠的915 NM激光器，窗口结构由杂质空置排放（IFVD）制造
8. AlGaAs Double-Heterostructure Diode Lasers Fabricated on a Monolithic GaAs/Si Substrate. [R] . Windhorn, T. H., Tsaur, B. Y., Metze, G. M., 1984

机译：在单片Gaas / si衬底上制造的alGaas双异质结构二极管激光器。

Highly reliable 0.98#mu#m laser diodes with a window structure fabricated by Si-ion implantation

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