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Visible ITO Pattern in Capacitive Touch Lens: Cause and Countermeasure

机译：电容式隐形眼镜中可见的ITO图案：原因和对策

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摘要

Market demand for touch panel/lens has been exceptionally high for the recent years due to smartphones, tablet PCs, etc. Among the available technologies to envision touch functionality, capacitive touch screen has received the great attention due to the various superiorities over the competing ones. Capacitive touch screen features two transparent conductive electrodes, such as ITO (indium tin oxide). However, the difference in refractive indices of ITO, substrate, and air, ITO pattern is clearly visible if there is no proper countermeasure. Most of touch screen makers and ITO substrate supplier utilize "index-matching technology" to prevent this phenomenon. Even though of the attempts to minimize visible ITO pattern in final product, there are many technical and process challenges. In this study, the causes around visible ITO pattern were investigated to understand and provide the proper countermeasures. One of the possible causes for visible ITO pattern was improper annealing process in ITO especially for film substrate. According to XPS (X-ray photoelectron spectroscopy)/ESCA (electron spectroscopy for chemical analysis) and other analysis results, ITO, which is normally deposited through sputtering, is not fully transformed to oxidized state. After aligning and adjusting annealing condition, acknowledged visible ITO pattern was disappeared. Other causes for visible patterns were also discussed in detail, and the relevant countermeasures were provided.
机译：近年来，由于智能手机，平板电脑等对触摸面板/镜头的市场需求异常高。在可设想触摸功能的可用技术中，电容式触摸屏由于在竞争技术上的各种优势而受到了广泛的关注。 。电容式触摸屏具有两个透明的导电电极，例如ITO（氧化铟锡）。但是，如果没有适当的对策，则可以清楚地看到ITO，基材和空气以及ITO图案的折射率差异。大多数触摸屏制造商和ITO基板供应商都采用“指数匹配技术”来防止这种现象。尽管试图最小化最终产品中的可见ITO图案，但仍存在许多技术和工艺挑战。在本研究中，对可见ITO图案周围的原因进行了调查，以了解并提供适当的对策。造成可见ITO图案的可能原因之一是ITO中的退火工艺不当，尤其是对于薄膜基材。根据XPS（X射线光电子能谱）/ ESCA（用于化学分析的电子能谱）和其他分析结果，通常通过溅射沉积的ITO不能完全转变为氧化态。调整并调整退火条件后，可见的ITO图案消失了。还详细讨论了造成可见图案的其他原因，并提供了相应的对策。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Duk Su Kim; Gyeong-Geun Lee; Jacob Yang; Dong Hyuk Shin;

  • 作者单位

    RD Center, ELK Corporation, Daejeon, Korea, Republic of;

    Nuclear Materials Research Division, Korea Atomic Energy Research Institute, Daejeon, Korea, Republic of;

    RD Center, ELK Corporation, Daejeon, Korea, Republic of;

    RD Center, ELK Corporation, Daejeon, Korea, Republic of;

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  • 正文语种 eng
  • 中图分类 材料;
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