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首页> 外文会议>Transparent conducting oxides and applications >Deposition of Zinc Oxide Thin Films Using a Surface Reaction on Platinum Nanoparticles
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Deposition of Zinc Oxide Thin Films Using a Surface Reaction on Platinum Nanoparticles

机译：铂纳米粒子上的表面反应沉积氧化锌薄膜

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摘要

A new chemical vapor deposition method for the growth of ZnO films using the reaction between dimethylzinc (DMZn) and thermally excited H_2O produced by a Pt-catalyzed H_2-O_2 reaction was investigated. The thermally excited H_2O molecules formed by the exothermic reaction of H_2 and O_2 on the catalyst were ejected from a fine nozzle into the reaction zone and allowed to collide with DMZn ejected from another fine nozzle. The ZnO films were grown directly on a-plane (11-20) sapphire substrates at substrate temperatures of 773-873 K with no buffer layer. X-ray diffraction patterns exhibited intense (0002) and (0004) peaks from the ZnO(0001) index plane. The smallest full width at half maximum (FWHM) value of the co-rocking curve of ZnO(0002) was less than 0.1°. The largest Hall mobility and the smallest residual carrier concentration of the ZnO films were 169 cm~2 V ~(-1)s ~(-1) and 1.7×10~(17)cm~3, respectively. Photoluminescence (PL) spectra at room temperature exhibited a band edge emission at 3.29 eV, with a FWHM of 104 meV. Green luminescence from deeper levels was generally about 1.5% of the band edge emission intensity. PL spectra at 5 K showed a strong emission peak at 3.3603 eV, attributed to the neutral donor-bound exciton D°_x,. The FWHM was as low as 1.0 meV. Free exciton emissions also appeared at 3.3757 eV (Fxa, n=l) and 3.4221 eV (FX_A, n=2).
机译：研究了一种新的化学气相沉积方法，该方法利用二甲基锌（DMZn）与Pt催化的H_2-O_2反应产生的热激发H_2O之间的反应来生长ZnO膜。由H_2和O_2在催化剂上的放热反应形成的热激发的H_2O分子从细喷嘴喷射到反应区中，并与从另一细喷嘴喷射的DMZn碰撞。 ZnO膜直接在a面（11-20）蓝宝石衬底上生长，衬底温度为773-873 K，没有缓冲层。 X射线衍射图显示从ZnO（0001）折射率平面开始的强烈（0002）和（0004）峰。 ZnO（0002）共同摇摆曲线的最小半峰全宽（FWHM）值小于0.1°。 ZnO薄膜的最大霍尔迁移率和最小残留载流子浓度分别为169 cm〜2 V〜（-1）s〜（-1）和1.7×10〜（17）cm〜3。室温下的光致发光（PL）光谱在3.29 eV处显示出带边缘发射，FWHM为104 meV。较深水平的绿色发光通常约为能带边缘发射强度的1.5％。在5 K处的PL光谱显示在3.3603 eV处有一个很强的发射峰，这归因于中性的施主结合激子D°_x。 FWHM低至1.0meV。自由激子发射也出现在3.3757 eV（Fxa，n = 1）和3.4221 eV（FX_A，n = 2）处。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Kanji Yasui; Hitoshi Miura; Hiroshi Nishiyama;

  • 作者单位

    Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;

    Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;

    Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;

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