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首页> 外文会议>Transparent conducting oxides and applications >Bandgap engineered high mobility indium oxide thin films for photovoltaic applications
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Bandgap engineered high mobility indium oxide thin films for photovoltaic applications

机译：带隙工程设计的高迁移率氧化铟薄膜，用于光伏应用

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摘要

Magnesium and titanium doped indium oxide (1MT0) thin films were grown using pulsed laser deposition technique. Magnesium was added to enhance the bandgap, whereas titanium was added to improve carrier concentrations and mobility of indium oxide films. The effect of growth temperature on structural, optical, and electrical properties were studied. It was observed that the optical transparency of the films strongly depends on growth temperature and increases with increase in growth temperature. The films grown at 600 ℃ showed optical transparency > 85%. We observed widening in bandgap of indium oxide by doping with magnesium and titanium. The bandgap of 1MTO films increases with increase in growth temperature. The maximum bandgap of 3.9 eV was observed for film grown at 600 ℃. It was observed that growth temperature strongly affects the electrical properties such as resistivity, carrier concentration, and mobility. The electrical resistivity and mobility of the films increases with increase in growth temperature. On the other hand, carrier concentration decreases with increase in growth temperature. Temperature dependence electrical resistivity measurements showed that films grown at low temperatures are semiconducting in nature, while films grown at high temperature showed transition from semiconducting to metallic behavior. These wide bandgap, highly transparent, and high mobility films could be used for photovoltaic applications.
机译：使用脉冲激光沉积技术生长了掺镁和钛的氧化铟（1MT0）薄膜。添加镁以提高带隙，而添加钛以改善载流子浓度和氧化铟膜的迁移率。研究了生长温度对结构，光学和电学性质的影响。观察到膜的光学透明性强烈取决于生长温度，并且随着生长温度的增加而增加。在600℃下生长的薄膜的光学透明度> 85％。我们观察到通过掺杂镁和钛，氧化铟的带隙变宽。 1MTO薄膜的带隙随生长温度的升高而增加。在600℃下生长的薄膜的最大带隙为3.9 eV。观察到生长温度强烈影响电性能，例如电阻率，载流子浓度和迁移率。膜的电阻率和迁移率随着生长温度的升高而增加。另一方面，载流子浓度随着生长温度的升高而降低。温度依赖性电阻率测量结果表明，在低温下生长的薄膜本质上是半导体，而在高温下生长的薄膜则表现出从半导体到金属行为的转变。这些宽带隙，高度透明和高迁移率的薄膜可用于光伏应用。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    R.K. Gupta; K. Ghosh; P.K. Kahol;

  • 作者单位

    Department of physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO-65897;

    Department of physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO-65897;

    Department of physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO-65897;

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  • 正文语种 eng
  • 中图分类 材料;
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