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Optoelectronic characterization of morphology-controlled zinc oxide nanowires

机译:形态控制的氧化锌纳米线的光电特性

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摘要

In this paper, we report the characterization of vertically aligned ZnO nanowire (NW) arrays synthesized by metal-catalyzed chemical vapor deposition. The growth mechanism of ZnO NWs may be related to vapor-solid-nucleation. Morphological, structural, optical and field emission characteristics can be modified by varying the growth time. For growth time reaches 120 min, the length and the diameter of ZnO NWs are 1.5 um and 350 nm, and they also show preferential growth orientation along the c-axis. Moreover, strong alignment and uniform distribution of ZnO NWs can effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region as well. Field emission measurement indicated that the growth time play an important role in density- and morphology-controlled ZnO NWs, and thus ZnO NWs are expected to be used in versatile optoelectronic devices.
机译:在本文中,我们报告了通过金属催化化学气相沉积合成的垂直排列的ZnO纳米线(NW)阵列的表征。 ZnO NWs的生长机理可能与气固成核有关。可以通过改变生长时间来改变形态,结构,光学和场发射特性。当生长时间达到120分钟时,ZnO NW的长度和直径分别为1.5 um和350 nm,并且它们还显示出沿c轴的优先生长方向。此外,ZnO NW的强取向性和均匀分布可以有效地增强抗反射性,在可见光区域的平均反射率也达到5.7%。场发射测量表明,生长时间在密度和形貌控制的ZnO NW中起着重要作用,因此ZnO NW有望用于通用的光电器件中。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan 333, Taiwan,Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei- Shan Tao-Yuan 333, Taiwan;

    Department of Photonics Engineering, Yuan-Ze University, 135 Yuan-Tung Road, Chung-Li 320, Taiwan;

    Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan 333, Taiwan;

    Department of Photonics Engineering, Yuan-Ze University, 135 Yuan-Tung Road, Chung-Li 320, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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