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An UHV-Compatible DC Off-Axis Sputtering Device for Reactive Sputtering and Investigation of the Plasma Properties during Niobium Deposition

机译：特高压兼容直流离轴溅射设备，用于反应溅射和铌沉积过程中的等离子体特性研究

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In a DC sputtering device, which had been successfully tested by sputtering films of high-T_c superconducting materials [1], the planar arrangement has been altered to an off-axis one and lateron a planar magnetron target holder (unbalanced) was included into the setup. Nb and NbN-films have been prepared - the latter also by reactively sputtering from an Nb target in a pure N_2 or (Ar + N_2) atmosphere, respectively. During the deposition of niobium in the non-magnetron mode we have used Langmuir-probes to investigate the plasma parameters in the sputter discharge.

机译：在已经通过高T_c超导材料的薄膜溅射成功测试的DC溅射装置中[1]，将平面布置更改为离轴布置，然后将平面磁控靶支架（不平衡）包含在其中。设定。已经制备了Nb和NbN膜-后者也分别通过在纯N_2或（Ar + N_2）气氛中从Nb靶进行反应溅射而制得。在非磁控管模式下沉积铌的过程中，我们已使用Langmuir探针研究了溅射放电中的等离子体参数。

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《Trends and new applications of thin films》|1998年|319-322|共4页
会议地点 Regensburg(DE);Regensburg(DE)
作者
A. Kraemer; H. Hammer; A. Schneider;
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作者单位

Institut fuer Angewandte Physik, Heinrich-Heine-Universitaet Duesseldorf, D-40225 Duesseldorf, Germany;

Institut fuer Angewandte Physik, Heinrich-Heine-Universitaet Duesseldorf, D-40225 Duesseldorf, Germany;

Max-Planck-lnstitut fuer Eisenforschung, D-40237 Duesseldorf Germany;

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原文格式 PDF
正文语种 eng
中图分类薄膜物理学;
关键词
DC/magnetron-sputtering; reactiveon-reactive sputtering; niobium; niobium nitride; plasma properties;

机译：直流/磁控溅射；反应/非反应溅射；铌;氮化铌等离子特性;

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专利

1. Process simulation of reactive DC magnetron sputtering for thin film deposition of niobium-titanium nitride [J] . Maezawa H., Sato T., Noguchi T. IEEE Transactions on Applied Superconductivity . 2005,第2期

机译：反应性直流磁控溅射溅射沉积铌钛氮化物的过程模拟
2. Deposition of TiO2 Films by reactive Inductively Coupled Plasma assisted DC magnetron sputtering for high crystallinity and high deposition rate [J] . Y.H. Han, S.J. Jung, J.J. Lee Surface & Coatings Technology . 2007,第9a11期

机译：反应性电感耦合等离子体辅助直流磁控溅射沉积TiO2薄膜可实现高结晶度和高沉积速率
3. Analysis of relevant plasma parameters for ZnO : Al film deposition based on data from reactive and non-reactive DC magnetron sputtering [J] . Herrmann D., Oertel M., Menner R., Surface & Coatings Technology . 2003,第0期

机译：基于反应性和非反应性直流磁控溅射数据分析ZnO：Al膜的相关等离子体参数
4. An UHV-Compatible DC Off-Axis Sputtering Device for Reactive Sputtering and Investigation of the Plasma Properties during Niobium Deposition [C] . International symposium on trends and new applications of thin films;TATF '98 . 1998

机译：用于无功溅射的UHV兼容的直流脱轴溅射装置及铌沉积期间的血浆特性研究
5. The deposition and characterization of high dielectric constant films prepared by pulsed reactive DC magnetron sputtering technique. [D] . Kim, Jin-Young. 2000

机译：脉冲反应直流磁控溅射技术制备的高介电常数薄膜的沉积和表征。
6. In situ and real-time monitoring of structure formation during non-reactive sputter deposition of lanthanum and reactive sputter deposition of lanthanum nitride [O] . Bärbel Krause, Dmitry S. Kuznetsov, Andrey E. Yakshin, -1

机译：镧的非反应性溅射沉积和氮化镧的反应性溅射沉积过程中结构形成的原位和实时监测
7. Deposition of SiOx Thin Films on Y-TZP by Reactive Magnetron Sputtering: Influence of Plasma Parameters on the Adhesion Properties Between Y-TZP and Resin Cement for Application in Dental Prosthesis [O] . Calvacanti de Queiroz, Jose Renato [UNESP], Duarte, Diego Alexandre, de Assuncao e Souza, Rodrigo Othavio, 2011

机译：磁控溅射在Y-TZP上沉积SiOx薄膜：等离子体参数对Y-TZP与树脂假牙粘接性能的影响

An UHV-Compatible DC Off-Axis Sputtering Device for Reactive Sputtering and Investigation of the Plasma Properties during Niobium Deposition

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