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首页> 外文会议>Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition >The impact of high-voltage and fast-switching devices on modular multilevel converters
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The impact of high-voltage and fast-switching devices on modular multilevel converters

机译：高压和快速开关设备对模块化多电平转换器的影响

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摘要

US government is funding the development of high-voltage and fast-switching power semiconductor devices based on silicon carbide (SiC) for applications in medium- and high-voltage power systems. The availability of these devices should reduce the complexities of grid-connected advanced power electronic systems like medium-voltage voltage-source converters (VSC) for HVDC terminals, power electronic interfaces for distributed generation, or high-power motor drives. However, fast-switching devices may augment the adverse effects of parasitic inductances that are inherent in any power converter layout. Hence, this paper presents a theoretical analysis of the impacts that the developing 15-kV SiC insulated gate bipolar transistors (IGBTs) have on modular multilevel converters (MMCs) in terms of the sub-module (SM) numbers, the SM capacitance, the effects of parasitic inductances on overvoltages, capacitor and IGBT module volumes, and THD. An 800 MW ±320 kV VSC-HVDC terminal is selected as a case study to illustrate the potential advantages of such a high-voltage and fast-switching semiconductor device.
机译：美国政府正在资助开发基于碳化硅（SiC）的高压和快速开关功率半导体器件，以用于中高压电力系统。这些设备的可用性应降低并网的先进电力电子系统的复杂性，例如用于HVDC端子的中压电压源转换器（VSC），用于分布式发电的电力电子接口或大功率电动机驱动器。但是，快速开关设备可能会加剧任何功率转换器布局中固有的寄生电感的不利影响。因此，本文就子模块（SM）编号，SM电容，绝缘子的数量，对正在开发的15 kV SiC绝缘栅双极型晶体管（IGBT）对模块化多电平转换器（MMC）的影响进行了理论分析。寄生电感对过压，电容器和IGBT模块体积以及THD的影响。选择一个800 MW±320 kV VSC-HVDC端子作为案例研究，以说明这种高压，快速开关的半导体器件的潜在优势。

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