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High-speed Resonant Cavity Enhanced Schottky Photodiodes

机译：高速谐振腔增强型肖特基光电二极管

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摘要

Design, fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode is reported. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In_0.08Ga_0.92As) and a distributed AlAs/GaAs Bragg mirror. The Schottky contact metal serves as a high reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photoresponse had a resonance around 895 nm, in good agreemtn with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental set-up limited temporal response of 18 psec FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
机译：报告了基于GaAs的高速谐振腔增强（RCE）肖特基光电二极管的设计，制造和测试。顶部照明的RCE检测器通过集成肖特基接触，薄吸收区（In_0.08Ga_0.92As）和分布式AlAs / GaAs布拉格镜构成。肖特基接触金属在RCE检测器结构中充当高反射率顶镜。通过使用微波兼容制造工艺来制造器件。所产生的光谱光响应在895 nm附近发生共振，这与我们的模拟非常吻合。半峰全宽（FWHM）为15 nm，增强因子超过6。光电二极管的实验设置受限时间响应为18 psec FWHM，相当于3 dB带宽20 GHz

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