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Submicron Lateral Scaling of Vertical-Transport devices Transferred-Substrate Bipolar Transistors and Schottky-Collecto Tunnel Diodes

机译：垂直传输器件的亚微米横向缩放比例转移衬底双极晶体管和肖特基-Collecto隧道二极管

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Transferred-substrate HBTs, fabricated with 0.7 micron emitters and 1.6 micron collectors, obtain 277 GHz power-gain cutoff frequencies f_max. At 0.1 #mu#m lithography, the device should obtain approx 500 GHz f_max. Deep submicron Schottky-collector resonant tunnel diodes (SRTDs) have estimated 2.2 THz cutoff frequencies. 64-element monolithic SRTD array osicllated at 650 GHz.

机译：由0.7微米发射极和1.6微米集电极组成的转移衬底HBT获得277 GHz的功率增益截止频率f_max。在0.1＃μm的光刻条件下，该设备应获得约500 GHz f_max。深亚微米肖特基集电极谐振隧道二极管（SRTD）的截止频率估计为2.2 THz。振荡频率为650 GHz的64元素单片SRTD阵列。

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《Ultrafast electronics and optoelectronics》|1997年|p.151-153|共3页
会议地点 Incline Village NV(US)
作者
M.Rodwell; r.Pullela; B.Agarwal; M.Reddy; Q.Lee; J.Guthrie; D.Mensa; L.Samosk; S.C.Martin; R.P.Smith;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Submicron transferred-substrate heterojunction bipolar transistors [J] . Lee Q., Martin S.C. IEEE Electron Device Letters . 1999,第8期

机译：亚微米转移衬底异质结双极晶体管
2. A study of ESD protection devices for input pins. Discharge characteristics of diode, lateral bipolar transistor, and thyristor under MM and HBM tests [J] . Ishizuka H., Okuyama K. IEEE transactions on components, packaging, and manufacturing technology. Part C, Manufacturing . 1998,第4期

机译：对输入引脚ESD保护器件的研究。 MM和HBM测试下二极管，横向双极晶体管和晶闸管的放电特性
3. Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor [J] . Youichi Ashida, Shigeki Takahashi, Satoshi Shiraki, Japanese journal of applied physics . 2012,第4ISSUE2期

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4. A Study Of Esd Protection Devices For Input Pins Discharge Characteristics Of Diode, Lateral Bipolar Transistor And Thyristor Under Mm And Hbm Tests [C] . Ishizuka, H., Okuyama, . 2001

机译：在Mm和Hbm测试下用于二极管，横向双极晶体管和晶闸管的输入引脚放电特性的ESD保护装置的研究
5. Development of III-Nitride Bipolar Devices: Avalanche Photodiodes, Laser Diodes, and Double-Heterojunction Bipolar Transistors. [D] . Zhang, Yun. 2011

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6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

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7. Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths [O] . Rodwell Mark, Betser Y., Jaganathan S., 2000

机译：HBT和其他垂直传输设备的亚微米横向缩放：朝太赫兹带宽
8. Wideband Transferred-Substrate AlGaN-GaN Heterojunction Bipolar Transistors for Microwave Power Applications [R] . Mishra, U. K. , McCarthy, L. 2001

机译：用于微波功率应用的宽带转移衬底alGaN-GaN异质结双极晶体管

Submicron Lateral Scaling of Vertical-Transport devices Transferred-Substrate Bipolar Transistors and Schottky-Collecto Tunnel Diodes

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