Ultrafast Photoconductive Switches with a Gap of 43 nm Fabricated by an Atomic Force Microscope

机译：原子力显微镜制造的间隙为43 nm的超快光电导开关

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Photoconductive switches with a gap of 43 nm have been fabricated by usign an atomic force microscope. Ultrafast response of the switches have been measured by electrooptic sampling method. Intrinsic response of the switch has been estimated as 210 fs by extrapolation of impulse response at zero distance.

机译：通过使用原子力显微镜已经制造出间隙为43nm的光电导开关。开关的超快响应已通过电光采样方法进行了测量。通过外推零距离的脉冲响应，可以将开关的固有响应估计为210 fs。

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来源
《Ultrafast electronics and optoelectronics》|1997年|p.95-96|共2页
会议地点 Incline Village NV(US)
作者
Taro Itatani; Tadashi Nakagawa; Kazuhiko Matsumoto; Yuichi Kotaki; Hisao Uchiki;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Photoconductive switch, Atomic foce Microscopy, Electrooptic sampling, Ultrafast.;

机译：光电导开关，原子显微镜，电光采样，超快。;

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2. Cross-Sectional Transmission Electron Microscopy Analysis of Nanogap Electrode Fabricated by Atomic Force Microscope Local Oxidation [J] . Rai Moriya, Eriko Ikenaga, Satoru Masubuchi, Japanese journal of applied physics . 2013,第5Issue1期

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4. Ultrafast photoconductive switch with a 43 nm insulator gap fabricated by an atomic force microscope [C] . Itatani, T., Nakagawa, . 2001

机译：原子力显微镜制造的绝缘体间隙为43 nm的超快光电导开关
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6. Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique [O] . HZ Song, T Usuki, T Ohshima, 2006

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7. Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs [O] . Tze-An Liul 2014

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8. Vertical Alignment of Single-Walled Carbon Nanotubes on Nanostructure Fabricated by Atomic Force Microscope [R] . Lee, H. 2009

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Ultrafast Photoconductive Switches with a Gap of 43 nm Fabricated by an Atomic Force Microscope

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