Single and double oxidations in a 980 nm VCSEL - impact on certain electrical and optical properties

机译：980 nm VCSEL中的单氧化和双氧化-对某些电学和光学性质的影响

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In this paper we present the simulation results of an oxide-confined, InGaAs/GaAs based vertical-cavity surface-emitting laser with three different configurations of the oxide apertures. We analyze the impact of the number and position of oxide layers on the carrier distribution in the laser's active region, distribution of the optical modes, and modulation properties.

机译：在本文中，我们介绍了一种氧化物限制的基于InGaAs / GaAs的垂直腔面发射激光器的模拟结果，该激光器具有三种不同的氧化物孔径配置。我们分析了氧化物层的数量和位置对激光器有源区中载流子分布，光学模式分布和调制特性的影响。

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《Vertical-Cavity surface-emitting lasers XIX》|2015年|93810N.1-93810N.9|共9页
会议地点 San Francisco CA(US)
作者
Patrycja Spiewak; Tomasz Czyszanowski; Jaroslaw Walczak; Robert P. Sarzala; Philip Moser; Dieter Bimberg; James A. Lott; Michal Wasiak;
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Institute of Physics, Lodz University of Technology, Wolczanska 219, Lodz, Poland;

Institute of Physics, Lodz University of Technology, Wolczanska 219, Lodz, Poland;

Institute of Physics, Lodz University of Technology, Wolczanska 219, Lodz, Poland,JWS, Piotrkowska 204/210 m. 115, 90-369 Lodz, Poland;

Institute of Physics, Lodz University of Technology, Wolczanska 219, Lodz, Poland;

Institute of Solid State Physics and Center of Nanophotonics, Technische Universitaet Berlin Hardenbergstrasse 36, Berlin, Germany;

Institute of Solid State Physics and Center of Nanophotonics, Technische Universitaet Berlin Hardenbergstrasse 36, Berlin, Germany;

Institute of Solid State Physics and Center of Nanophotonics, Technische Universitaet Berlin Hardenbergstrasse 36, Berlin, Germany;

Institute of Physics, Lodz University of Technology, Wolczanska 219, Lodz, Poland;

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1. Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top [J] . Samiha IshratIslam, ArnobIslam, SaifulIslam International Scholarly Research Notices . 2014,第59期

机译：集成双波长VCSEL，底部使用电泵浦的GaInAs / AlGaAsAs 980 nm腔，顶部使用光泵浦的GaInAs / AlGaInAs 1550 nm腔
2. High-Speed and Temperature-Stable, Oxide-Confined 980-nm VCSELs for Optical Interconnects [J] . Wolf P., Moser P., Larisch G., IEEE journal of selected topics in quantum electronics . 2013,第4期

机译：高速和温度稳定，氧化物受限的980nm VCSEL，用于光学互连
3. Optical Properties of GaAs/AlO$_{x}$ and Si/SiO $_{x}$ High Contrast Gratings Designed for 980-nm VCSELs [J] . Gebski M., Dems M., Chen J., IEEE transactions on nanotechnology . 2014,第3期

机译：为980 nm VCSEL设计的GaAs / AlO $ _ {x} $和Si / SiO $ _ {x} $高对比度光栅的光学特性
4. Single and double oxidations in a 980 nm VCSEL - impact on certain electrical and optical properties [C] . Patrycja Spiewak, Tomasz Czyszanowski, Jaroslaw Walczak, Conference on vertical-Cavity surface-emitting lasers XIX . 2015

机译：980nm vcsel中的单一和双氧化 - 对某些电气和光学性质的影响
5. Temperature-Stable, Energy-Efficient, and High Bit-Rate 980 nm VCSELs =Temperaturstabile und energieeffiziente 980 nm VCSELs für h?chste Bitraten [D] . Li, Hui. 2015

机译：温度稳定，节能，高比特率980nm vcsels =温度稳定且节能为洪水比特率的980nm vcsels
6. Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top [O] . Samiha Ishrat Islam, Arnob Islam, Saiful Islam 2014

机译：集成双波长VCSEL底部使用电泵浦的GaInAs / AlGaAsAs 980 nm腔顶部使用光泵浦的GaInAs / AlGaInAs 1550 nm腔
7. Dynamics of Normal and Reverse Polarization Switching in 1550-nm VCSELs under Single and Double Optical Injection [O] . Salvide, MF, Torre, MS, Henning, ID, 2015

机译：单光和双光注入下1550 nm VCSEL中正向和反向偏振切换的动力学

Single and double oxidations in a 980 nm VCSEL - impact on certain electrical and optical properties

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