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首页> 外文会议>Wide bandgap semiconductor materials and devices 12 >Influence of Doping and Co-doping on the Behavior of Sputtered ZnO Thin Films
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Influence of Doping and Co-doping on the Behavior of Sputtered ZnO Thin Films

机译：掺杂和共掺杂对溅射ZnO薄膜行为的影响

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摘要

A co-dopand approach was used to investigate influence of gallium-nitrogen co-doping on the microstructure and electrical parameters of ZnO. ZnO:Ga:N thin films were deposited by rf diode sputtering at varying nitrogen content (0÷100%) in Ar/N_2 gas. ZnO:Ga films (0% N_2) showed minimum resistivity of 0.12 Ωcm, electron concentration of 2.5×10~(19) cm~(-3) and mobility of 2 cm~2/Vs. A hole concentration of 2.6×10~(18) cm~3, a mobility of 2 cmVVsand a resistivity of 1.5 Qcm in ZnO:Ga:N resulted from the deposition with 100%N_2in Ar/N_2 gas. XRD patterns revealed a profound impact of Ga-N co-doping on film orientation. The estimated crystallite size varied from 234 to 41 nm, depending on the N_2 content. TEM images of the co-doped films along with the corresponding selected area diffraction pattern indicated a polycrystalline, columnar layer with a c-axis preferred orientation. AFM images demonstrated the different crystalline structure and grain formation depending on nitrogen content.
机译：采用共掺杂方法研究了镓氮共掺杂对ZnO的微观结构和电学参数的影响。 ZnO：Ga：N薄膜通过射频二极管溅射在Ar / N_2气体中以不同的氮含量（0÷100％）沉积。 ZnO：Ga薄膜（0％N_2）的最小电阻率为0.12Ωcm，电子浓度为2.5×10〜（19）cm〜（-3），迁移率为2 cm〜2 / Vs。空穴浓度为2.6×10〜（18）cm〜3，迁移率为2 cmVVs，在ZnO：Ga：N中的电阻率为1.5 Qcm，这是由于在Ar / N_2气体中沉积了100％N_2的结果。 XRD图谱显示了Ga-N共掺杂对薄膜取向的深刻影响。取决于N_2含量，估计的微晶尺寸在234nm至41nm之间变化。共掺杂膜的TEM图像以及相应的选定区域衍射图样表明，具有c轴优先取向的多晶柱状层。原子力显微镜图像显示取决于氮含量的不同晶体结构和晶粒形成。

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  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    K. S. Shtereva; P. Sutta; B. Pecz; I. Novotny; J. Kovac; V. Tvarozek;

  • 作者单位

    Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, SK,Department of Electronics, University of Rousse, Studentska 8, 7017 Ruse, BG;

    New technologies-Research Center, University of West Bohemia, 30614 Plzen, CZ;

    Research Institute for Technical Physics and Matl. Sci. H-1525 Budapest, HU;

    Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, SK;

    Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, SK;

    Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, SK;

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  • 正文语种 eng
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