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Vertically Configured Nanodiamond Vacuum Field Emission Transistor Arrays

机译：垂直配置的纳米金刚石真空场发射晶体管阵列

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摘要

The design, fabrication and device characteristics of a vertically configured nanodiamond vacuum field emission transistor array are reported. The device is fabricated by a simple dual-mask process, involving mold transfer technique, growth of chemical vapor deposited nanodiamond and formation of self-aligning gate structure from a silicon-on-insulator (SOI) substrate. The gate controlled emission current modulation was achieved at a relatively low gate turn-on voltage of 25 V. The device demonstrates transistor characteristics with high emission anode current of 160 uA and negligible gate intercepted current of less than 3 uA at gate voltage of 34 V. This nanodiamond VFET promises potential applications in vacuum microelectronics, including vacuum integrated circuits.
机译：报告了垂直配置的纳米金刚石真空场发射晶体管阵列的设计，制造和器件特性。该器件采用简单的双掩模工艺制造，涉及模具转移技术，化学气相沉积纳米金刚石的生长以及由绝缘体上硅（SOI）衬底形成的自对准栅极结构。栅极控制的发射电流调制是在25 V的相对较低的栅极导通电压下实现的。该器件展示了晶体管特性，在34 V的栅极电压下具有160 uA的高发射阳极电流和小于3 uA的可忽略的栅极拦截电流该纳米金刚石VFET有望在真空微电子学（包括真空集成电路）中潜在应用。

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  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    S. H. Hsu; W. P. Kang; J. L. Davidson; J. H. Huang;

  • 作者单位

    Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA;

    Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA;

    Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA;

    Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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