Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

机译：通过快速热处理形成4H-SiC MOSFET的氮化栅极氧化物

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Rapid Thermal Processing has been evaluated as an alternative to the conventional furnace process for gate oxide formation of SiC MOSFETs. We show that the growth of the SiO_2 films in a RTP chamber is orders of magnitude faster than in a conventional furnace. As well as being fast, this innovative oxidation method produces a significant improvement of MOSFET performances. Indeed, we demonstrate that combining the beneficial effect of in-situ surface preparation by H_2 anneal with the one of N_2O oxidation, the channel mobility increases and the electrical stability with respect to constant bias stress at low-field is improved.

机译：快速热加工已被评估为用于SiC MOSFET栅极氧化形成的传统炉法的替代方法。我们表明，RTP室中SiO_2膜的生长比常规炉中快几个数量级。这种创新的氧化方法不仅速度快，而且可以显着提高MOSFET的性能。确实，我们证明了通过H_2退火与N_2O氧化之一进行原位表面制备的有益效果相结合，沟道迁移率增加，并且相对于低场中恒定偏置应力的电稳定性得到改善。

著录项

来源
《Wide bandgap semiconductor materials and devices 12》|2011年|p.157-164|共8页
会议地点 Montreal(CA);Montreal(CA)
作者
A. Constant; P. Godignon; J. Montserrat; J. Millan;
展开▼
作者单位

Institut de Microelectrdnica de Barcelona - Centre Nacional de Microelectr6nica (IMB-CNM), CSIC, Campus UAB, Bellaterra 08193, Barcelona, Spain;

Institut de Microelectrdnica de Barcelona - Centre Nacional de Microelectr6nica (IMB-CNM), CSIC, Campus UAB, Bellaterra 08193, Barcelona, Spain;

Institut de Microelectrdnica de Barcelona - Centre Nacional de Microelectr6nica (IMB-CNM), CSIC, Campus UAB, Bellaterra 08193, Barcelona, Spain;

Institut de Microelectrdnica de Barcelona - Centre Nacional de Microelectr6nica (IMB-CNM), CSIC, Campus UAB, Bellaterra 08193, Barcelona, Spain;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL [J] . Joshi A.B., Kwong D.L. IEEE Transactions on Electron Devices . 1991,第12期

机译：具有快速热重氧化氮化薄栅极氧化物的MOSFET对热载流子引起的GIDL的耐受性
2. Hot-carrier effects in MOSFET's with nitrided-oxide gate-dielectrics prepared by rapid thermal processing [J] . Hori T., Yasui T. IEEE Transactions on Electron Devices . 1992,第1期

机译：具有通过快速热处理制备的氮化氧化物栅极电介质的MOSFET中的热载流子效应
3. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing [J] . Wu Y., Lucovsky G. IEEE Transactions on Electron Devices . 2000,第7期

机译：通过远程等离子体增强CVD和沉积后快速热退火制备的具有氮化的Si-SiO / sub 2 /界面的超薄氮化硅/氧化物堆叠栅极电介质的PMOSFET的性能和可靠性
4. Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs [C] . A. Constant, P. Godignon, J. Montserrat, Symposium on Wide Bandgap Semiconductor Materials and Devices . 2011

机译：通过快速热处理形成氮栅极氧化物，用于4H-SiC MOSFET
5. Development of a process flow for self -aligned double -gate MOSFET by tunnel epitaxy using nitrided thermal oxide as gate insulators. [D] . Ahmed, Shibly Sadique. 2001

机译：通过隧道外延，使用氮化的热氧化物作为栅绝缘体，开发自对准双栅MOSFET的工艺流程。
6. Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion [O] . B. Wickman, A. Bastos Fanta, A. Burrows, -1

机译：通过快速热处理制备用于太阳能转化的氧化铁膜
7. Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O) [O] . G. Gudjónsson, H. Ö. Ólafsson, E. Ö. Sveinbjörnsson 2015

机译：使用氧化亚氮（N2O）中生长的栅极氧化物增强4H-siC mOsFET中的反转沟道迁移率

Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

摘要

著录项

相似文献

相关主题

期刊订阅