Ill-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

机译：氮化物纳米线：用于照明和能源应用的新兴材料

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The aligned growth of Ill-nitride nanowires, along with results providing insights into the nanowire properties obtained using electrical, optical and structural characterization techniques, are discussed. A new "top-down" approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter is also presented, along with results from preliminary LEDs grown on these nanorod arrays. Additionally, a novel application of aligned nanowire arrays as strain-relief templates for the growth of high quality GaN is demonstrated.

机译：讨论了III族氮化物纳米线的对准生长以及提供对使用电学，光学和结构表征技术获得的纳米线特性的见解的结果。还提出了一种新的“自顶向下”方法，用于制造具有可控制的高度，间距和直径的高质量GaN基纳米棒的有序阵列，以及在这些纳米棒阵列上生长的初始LED的结果。另外，展示了对准的纳米线阵列作为应变消除模板用于高质量GaN生长的新应用。

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来源
《Wide bandgap semiconductor materials and devices 12》|2011年|p.3-11|共9页
会议地点 Montreal(CA);Montreal(CA)
作者
George T. Wang; Qiming Li; Jianyu Huang; Jonathan Wierer; Andrew Armstrong; Yong Lin; Prashanth Upadhya; Rohit Prasankumar;
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作者单位

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Sandia National Laboratories, Albuquerque, NM 87185;

Los Alamos National Laboratory, Los Alamos, NM 87545;

Los Alamos National Laboratory, Los Alamos, NM 87545;

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4. III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications [C] . George T. Wang, Qiming Li, Jianyu Huang, Symposium on Wide Bandgap Semiconductor Materials and Devices . 2011

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Ill-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

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