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首页> 外文会议>Wide bandgap semiconductor materials and devices 12 >Growth Behavior of M-Plane ZnO Epilayer on (100) LiGaO_2 by Chemical Vapor Deposition
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Growth Behavior of M-Plane ZnO Epilayer on (100) LiGaO_2 by Chemical Vapor Deposition

机译：化学汽相沉积在（100）LiGaO_2上M平面ZnO外延层的生长行为

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摘要

The growth behavior of ZnO epilayer on (100) LiGaO_2 (LGO) substrates by chemical vapor deposition was studied. At 650℃ or above, (10 I 0)-oriented ZnO epilayers were obtained. The epitaxial deposition of ZnO is, however, in competition with the volatilization of Li from the substrate surface. A discrete layer composed of ZnGa_2O_4 spinel nanocrystals is formed on the substrate surface. The (1010)-oriented ZnO grains, which nucleate epitaxially on the LGO substrate, have thus to grow laterally over the spinel nanocrystals to form a continuous epilayer.
机译：研究了ZnO外延层在（100）LiGaO_2（LGO）衬底上通过化学气相沉积的生长行为。在650℃以上，获得（10 I 0）取向的ZnO外延层。然而，ZnO的外延沉积与Li从基底表面的挥发竞争。由ZnGa_2O_4尖晶石纳米晶体组成的离散层形成在衬底表面上。 （1010）取向的ZnO晶粒在LGO衬底上外延成核，因此必须在尖晶石纳米晶体上横向生长以形成连续的外延层。

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  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    Jun-Yi Yu; Teng-Hsing Huang; Liuwen Chang; Mitch M.C. Chou; Dershin Gan;

  • 作者单位

    Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C;

    Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C;

    Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C;

    Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C;

    Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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