Scandium and gallium implantation doping of silicon carbide

机译：碳化硅的and镓注入掺杂

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Rutherford backscattering, Raman spectroscopy as well as photoluminescence, resistivity and Hall measurements have been used to investigate the doping behaviour of Scandium and Gallium ions implanted into Silicon Carbide respectively. The recovery of the crystal lattice after implantation at room temperature followed by rapid thermal annealing is shown to be less effective in the case of Scandium compared with Gallium. Scandium implanted SiC exhibited a high resistivity in comparison to Gallium implanted crystals.

机译：Rutherford背散射，拉曼光谱以及光致发光，电阻率和霍尔测量已用于研究分别注入碳化硅中的Scan和镓离子的掺杂行为。与镓相比，在dium的情况下，在室温下注入然后进行快速热退火后恢复晶格的效率较低。与镓注入的晶体相比，implant注入的SiC表现出高电阻率。

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《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.163-168|共6页
会议地点 San Francisco CA(US)
作者
T.Henkel; Y.Tanaka; N.Kobayashi; I.Koutzarov; H.Okumura; S.Yoshida; T.Ohshima;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Implant Bed Preparation with an Erbium, Chromium Doped Yttrium Scandium Gallium Garnet (Er,Cr: YSGG) Laser Using Stereolithographic Surgical Guide [J] . Ay?en Bodur, Gizem Berk, Gulin Seymen, Journal of Lasers in Medical Sciences . 2012,第1期

机译：立体光刻手术指南用with，铬掺杂钇Scan镓石榴石（Er，Cr：YSGG）激光制备植入床
2. Influence of an erbium, chromium-doped yttrium, scandium, gallium, and garnet (Er,Cr:YSGG) laser on the reestablishment of the biocompatibility of contaminated titanium implant surfaces. [J] . Schwarz F, Nuesry E, Bieling K, Journal of Periodontology . 2006,第11期

机译：，铬掺杂的钇，scan，镓和石榴石（Er，Cr：YSGG）激光对受污染的钛植入物表面生物相容性重建的影响。
3. Effect of scandium doping on structure and properties of aluminium alloy-silicon carbide particles composite material [J] . D. N. Plishkin, T. A. Chernysheva Физикаи　химия　обработки　материалов . 1999,第5期

机译：dium掺杂对铝合金-碳化硅颗粒复合材料结构与性能的影响
4. Scandium and gallium implantation doping of silicon carbide [C] . T.Henkel, Y.Tanaka, N.Kobayashi, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：碳化硅碳化硅和镓植入掺杂
5. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride. [D] . Salama, Islam Abdel Haleem. 2003

机译：宽带隙材料的激光掺杂和金属化：碳化硅，氮化镓和氮化铝。
6. Implant Bed Preparation with an Erbium Chromium Doped Yttrium Scandium Gallium Garnet (ErCr: YSGG) Laser Using Stereolithographic Surgical Guide [O] . Gülin Seymen, Zeynep Turgut, Gizem Berk, 2013

机译：立体光刻手术指南用with铬掺杂钇Scan镓石榴石（ErCr：YSGG）激光制备植入床
7. Manipulating energy storage characteristics of ultrathin boron carbide monolayer under varied scandium doping [O] . Naqvi, S. Rabab, Hussain, T., Panigrahi, P., 2017

机译：varied掺杂变化下超薄碳化硼单层的操纵储能特性
8. Investigation of Ion Implantation into High Purity and Controllably Doped Silicon and into Gallium Arsenide [R] . Carter, G. 1983

机译：离子注入高纯度可控掺杂硅及砷化镓的研究

Scandium and gallium implantation doping of silicon carbide

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