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High-pressure investigation of InGaN quantum wells

机译：InGaN量子阱的高压研究

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摘要

We have studied the pressure dependence of photoluminescence for various InGaN quantum wells of different Indium compositions. In contrast to classical quantum well systems such as GaAs/AlGaAs, the pressure coefficients of the photoluminescence peak position of wells of similar parameters can vary greatly, depending on conditions of growth. Generally, the pressure coefficient of hte emission peak is much lower than the one predicted for a GaN-InN system. We show that this behavior can be related in most cases to the influence of the thick Gan layer compressibility on the strain in the InGaN quantum wells. However, in some cases (Nichia devices), the pressure coefficient of the emission peak seems to be unrelated to the shift of teh energy gap of the material, suggesting the involvement of strongly localized electronic states.
机译：我们已经研究了不同铟组成的各种InGaN量子阱的光致发光压力依赖性。与经典的量子阱系统（例如GaAs / AlGaAs）相比，具有相似参数的阱的光致发光峰位置的压力系数可能会根据生长条件而发生很大变化。通常，热发射峰的压力系数远低于GaN-InN系统的预测压力系数。我们表明，这种行为在大多数情况下可能与InGaN量子阱中厚Gan层可压缩性对应变的影响有关。但是，在某些情况下（Nichia装置），发射峰的压力系数似乎与材料的能隙移动无关，这表明涉及强局部电子态。

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