EXAFS studies of group-III nitrides

机译：III族氮化物的EXAFS研究

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The group III nitrides have important applications for blue/green LEDs, blue/UV laser diodes and for high-power high frequency FETs. In all such devices the alloys play an important role either in the active part of the structure or in the cladding regions. The properties of the group III-nitride alloys are not at present well understood and in particular there are indications that phase separation can occur. We have undertaken a comprehensive study of (InGa)N alloys using EXAFS in order to study such problems.

机译：III族氮化物在蓝色/绿色LED，蓝色/ UV激光二极管以及大功率高频FET中具有重要的应用。在所有此类设备中，合金在结构的有效部分或包层区域均起着重要作用。目前尚不了解III族氮化物合金的性能，特别是有迹象表明会发生相分离。为了研究此类问题，我们已经使用EXAFS对（InGa）N合金进行了全面研究。

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来源
《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.519-524|共6页
会议地点 San Francisco CA(US)
作者
N.J.Jeffs; A.V.Blant; T.S.Cheng; C.T.Foxon; C.Bailey; P.G.Harrison; J.F.W.Mosselmans; A.J.Dent;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides [J] . M. Katsikini, M. Fieber-Erdmann, E. Holub-Krappe, Journal of synchrotron radiation . 1999,第Pta3期

机译：Ⅲ族二元和三元氮化物的氮K-edge NEXAFS测量
2. Theoretical Study of Some Thermal Properties of Group-III Nitrides [J] . Tanran Zhao International journal of advanced mechanical engineering . 2017,第2期

机译：氮素三氮氮化物热性质的理论研究
3. Computational studies of positron states and annihilation parameters in semiconductors – vacancy-type defects in group-III nitrides – [J] . S Ishibashi, A Uedono Journal of Physics: Conference Series . 2016,第1期

机译：正电子状态和湮灭参数在半导体中的计算研究 - III族氮化物中的空位型缺陷 -
4. EXAFS studies of group-III nitrides [C] . N.J.Jeffs, A.V.Blant, T.S.Cheng, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：EXAFS研究 - III族氮化物
5. Ab Initio Study of Disordered Nanoelectronic Devices: Copper Interconnects and Group-III Nitrides [D] . César, Mathieu. 2017

机译：AB Initio纳米电子器件的研究：铜互连和III族氮化物
6. Giant excitonic absorption and emission in two-dimensional group-III nitrides [O] . Maria Stella Prete, Davide Grassano, Olivia Pulci, -1

机译：二维III族氮化物的巨大激子吸收和发射
7. Nitride Semiconductor Surfaces. Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire. [O] . Hiroshi AMANO, Isamu AKASAKI 2000

机译：氮化物半导体表面。低温沉积层对蓝宝石族氮化族生长的影响。
8. Group-III Nitride Etch Selectivity in BCl(3)/Cl(2) ICP Plasmas;The Material Research Society Internet Journal of Nitride Semiconductor Research [R] . Abernathy, C. R. , Han, J. , Hong, J. , 1998

机译：BCl（3）/ Cl（2）ICp等离子体中的III族氮化物蚀刻选择性;材料研究学会互联网氮化物半导体研究杂志

EXAFS studies of group-III nitrides

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